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GaN-based nanoribbons (NRs) represent important structures because of their unique transport properties. They have high breakdown voltage and can be scaled down to nanosizes. We studied the transport and noise properties of NRs in a wide temperature range applying different external treatments: ultraviolet (UV) excitation and high voltage bias. Characteristic features in the form of bumps were revealed...
Junctionless p+-p-p+ silicon nanowire (NW) field-effect transistors with various geometries were fabricated. Noise measurements were performed for the samples with different widths and in different operation modes. Results demonstrate significant changes in noise and Hooge parameter when the NW geometry is changed. The dependences obtained can be explained by considering the different impacts of the...
We applied the noise spectroscopy technique as a powerful tool for the investigation of nano-sized bio-objects. The electrical and noise properties of the fabricated liquid-gated Si nanowire field-effect transistors as well as the influence of biomolecule attachment events on the nanowire structure were studied. We revealed that the dimensionless Hooge parameter can be used as a figure of merit for...
We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of the liquid-gated Si NW FETs and simulations using Sentaurus...
Thin conducting gold films with nanoconstriction are characterized by noise spectroscopy with and without a single 1,4-benzenedithiol (BDT) molecule between the contacts. The low frequency noise spectral density demonstrates the 1/fα type behavior with a factor, α, near to 1. It is shown, that the normalized noise spectral density is proportional to the resistance R in power 3/2 for the case without...
We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes...
In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs...
We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we...
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