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GaN-based nanoribbons (NRs) represent important structures because of their unique transport properties. They have high breakdown voltage and can be scaled down to nanosizes. We studied the transport and noise properties of NRs in a wide temperature range applying different external treatments: ultraviolet (UV) excitation and high voltage bias. Characteristic features in the form of bumps were revealed...
Junctionless p+-p-p+ silicon nanowire (NW) field-effect transistors with various geometries were fabricated. Noise measurements were performed for the samples with different widths and in different operation modes. Results demonstrate significant changes in noise and Hooge parameter when the NW geometry is changed. The dependences obtained can be explained by considering the different impacts of the...
We applied the noise spectroscopy technique as a powerful tool for the investigation of nano-sized bio-objects. The electrical and noise properties of the fabricated liquid-gated Si nanowire field-effect transistors as well as the influence of biomolecule attachment events on the nanowire structure were studied. We revealed that the dimensionless Hooge parameter can be used as a figure of merit for...
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