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We fabricated and in-depth characterized advanced planar and nanowire CMOS devices, strained by the substrate (sSOI or SiGe channel) and by the process (CESL, SiGe source/drain). We have built a novel access resistance (RACC) extraction procedure, which enables us to clearly evidence the strong impact of back-bias and strain on Racc (−21% for 4 V Vb and −53% for −1GPa stress on pMOS FDSOI). This is...
We fabricated Fully-Depleted (FD) nMOSFETs on strain-SOI substrates (sSOI), exceeding regular FDSOI devices by +20% in nMOS ON-state current (ION) and +18% in SRAM read current. For pMOSFETs on sSOI, the integration of Si0.57Ge0.43 by the Ge-enrichment technique (in so-called sSGOI) is the solution to reach the performance of Si0.78Ge0.22 channels built on SOI (SGOI) in terms of short channel hole...
The usefulness for technology computer-aided design (TCAD) tools of the bulk linear piezoresistive theory is limited for two reasons. The first is that the normal effective field breaks piezoresistive tensor symmetries increasing the number of independent coefficients from three to six. The second reason is due to the non-linear behavior of the mobility change at high stress values. In this paper,...
We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor...
Bipolar transistors in advanced BiCMOS technology rely on highly-doped SiGeC bases strained on Si. Modeling the electrical properties of such devices by TCAD means requires an accurate description of SiGeC transport parameters, including low-field mobility, saturation velocity and energy relaxation time. Since bipolar transistor operation involves electron and hole transport, both types of carriers...
We discuss atomistic approaches to quantum transport within the semi-empirical tight-binding framework. We show that the latter is well suited to the study of present nanostructures such as carbon nanotubes, semiconductor nanowires and graphene. It indeed provides a very good balance between accuracy and efficiency, and can be coupled with ab initio methods to upscale the calculations to the mesoscopic...
The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shifts, curvature masses and density-of-state masses – show new results, rising the issues of the limit of simple models like the effective mass approximation...
A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the <110>, <-110> and <100> directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the...
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