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Impacts of the 4H-SiC/SiO2 interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V curves of the MOS capacitors with the aid of TCAD simulation. The effect of nitrogen incorporation into the SiC/SiO2 interface via post-oxidation anneal (POA) on reducing the interface states is confirmed by the...
The characteristics of leakage current observed in the pixels of pinned photodiode CMOS image sensor with negative transfer-gate bias operation are investigated, taking metal contamination into account. Simulation results show that interface states between insulator and the pinned layer in the vicinity of transfer gate, acting as hole traps, are responsible for negative transfer-gate bias dependence...
The effect of hydrogen incorporation into nitrogen vacancies in silicon nitride on electron trap is analyzed using density functional theory method. A hydrogen atom is attached to a dangling bond which is well separated from other dangling bonds, whereas it is not attached to ones which strongly interact because of lattice distortion. An electron trap level caused by nitrogen vacancy becomes shallow...
In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by stress, ranging from a high tensile one to a high compressive one. Using this model, the quantum confinement effect, combined with large out-of-plane stress, is shown to play an important role to cause the threshold voltage shift as large as about 80 mV induced by high-film-stress contact etch-stop...
Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point. The inverse of the maximum RTN magnitude exhibits a normal distribution.
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