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The Cu pillar to Cu pillar bump bonding process, commonly used in bonding technology for the 3-dimensional stacking of TSV (Through Silicon Via) formed chips, requires an additional process for the generation of bumps on the face and back-side of the chip, and it has a drawback in that it is structurally vulnerable to mechanical stresses, such as thermal stress. This study proposes an ISB (Insert-Bump)...
Organic based materials and devices for flexible electronics have many disadvantages such as low charge transport, process temperature limitation, and etc. Those limitations, based on material itself, make the flexible electronic device difficult to compete with Si-based hard electronics that have excellent electric properties and much advanced design rule. Thus, as an effort to overcome the known...
TSV (Through-Silicon Via) 3D packaging technology has been and continues to be investigated by many of the semiconductor manufacturer and research institute as a practical way to achieve higher performance and smaller form factors. Compared with conventional 2D packaging, this can increase packing density and reduce power consumption dramatically because of shorter interconnection by vertical directional...
3D packaging technologies using TSV (Through-Silicon Via) has been studied widely in the recent years to achieve higher packaging density, lower power consumption and higher electrical performance because electrical line is shorter and Cu TSV has smaller electrical resistivity than any other package. However, there are many technical issues such as thin wafer/chip handling, TSV electrical and mechanical...
3D packaging technologies using TSV (Through-Silicon Via) has been studied widely in the recent years to achieve higher packaging density, lower power consumption and higher electrical performance because electrical line is shorter and Cu TSV has smaller electrical resistivity than any other package. However, there are many technical issues such as thin wafer/chip handling, TSV electrical and mechanical...
TSV (Through-Silicon Via) 3D packaging technology has been and continues to be investigated by many of the semiconductor manufacturer and research institute as a practical way to achieve higher performance and smaller form factors. Compared with conventional 2D packaging, this can increase packing density and reduce power consumption dramatically because of shorter interconnection by vertical directional...
An efficient C2C/C2W oxide bonding technique using self-alignment effect of a pair of hydrophilic chip surfaces, which are activated by atmospheric plasma, is applied to 3D stacking of multichip package in this work. Self-alignment and pre-bonding technique can provide high-speed bonding process and high-precision chip alignment accuracy simultaneously without high-precision chip manipulator. Conventional...
In this paper, porous vacuum picker and bonding head to impose uniform pressure on all the surface of wafer in the bonding process are proposed newly. Porous vacuum picker could reduce deformation and warpage problem during handling thin wafer because it has many number of small vacuum hole which induce small vacuum pressure at those holes region. Also, to impose uniform pressure on the wafer under...
An efficient C2C/C2W oxide bonding technique using self-alignment effect of a pair of hydrophilic chip surfaces, which are activated by plasma, is applied to 3D stacking of multichip packaging in this work. Self-alignment and pre-bonding technique can provide high-speed bonding process and high-precision chip alignment accuracy simultaneously without high-precision chip manipulator. Through experiments,...
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