The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A fully self-aligned Si bipolar process is described, which uses silane-only epitaxy to selectively grow the collector and base. Electrical measurements on the completed transistors yield a current gain of 189 and ideality factors of 1.004 and 1.15 for the collector and base characteristics respectively. Base leakage currents are observed on some devices, which are traced to oxide etching during epitaxy...
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the...
Electrical results are presented on low thermal butdget polysilicon emitters for Si/Si1-xiGex HBTs. Rapid thermal anneals of 30s in the temperature range 775-900??C are investigated, and arsenic and phosphorus emitter dopanits are compared. The base current is shown to be very sensitive to the temperature of the anneal that is used to diffuse the emitter dopant from the polysilicon into the underlying...
This paper reviews recent progress in high-speed Si/Si1-xGex heterojunction bipolar transistors. The values of fT and ECL gate delay achieved with these devices are described and compared with results for silicon homojunction bipolar transistors. The technological problems associated with the use of Si1-xGex are discussed, and device and circuit modelling results are presented which highlight the...
A comparison is made between measured and simulated boron base doping profiles in Si/Si1-x Gex heterojunction bipolar transistors fabricated with an n+ emitter contact implant. The non-equilibrium, supersaturation of defects arising from the implant is represented in the simulations by a point defect distribution obtained from Monte Carlo simulation. An enhancement of the boron diffusivity is predicted...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.