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More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16–22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works...
This paper introduces the comprehensive evaluation results of SiC-Based high power density inverter. The power density of the developed inverter is about 70kW/liter in volumetric, 50kW/kg in gravimetric. The inverter is forced air cooling 2-level voltage source inverter. In order to achieve higher power density than conventional inverters, we need to reduce losses of inverters or improve cooling performance...
The performance of short channel silicon between insulators (SBI) MOSFETs and the proposal of heavily doped silicon between insulators (HDSBI) MOSFETs, in which silicon region between local buried oxide (BOX) regions is heavily doped are presented. The electrical and thermal advantages in short-channel regions over conventional SBI MOSFET are verified by device simulation. Also, electrical properties...
Silicon On Insulator (SOI) MOSFETs have three problems due to Buried Oxide (BOX) layer: (1) suppression of thermal diffusion out of the SOI layer, (2) accumulation of excess carrier in the SOI layer, and (3) capture of carriers at trap states at the SOI/BOX interface. To reduce problems of thermal diffusion and excess carrier, Drain Source On Insulator (DSOI) MOSFETs were proposed. We simulate electrical...
This paper is described the ESD protection design technique for the integrated circuits, used the ESD parameter extracted by TLP (Transmission Line Pulsing) measurement. The ESD parameters need to simulate the ESD surge inflow phenomena into the devices accurately. This study find that it is most important for ESD parameter extraction conditions to be selected the suitable TLP calibration method and...
The continual downscaling of Si-MOSFETs requires the replacement of polycrystalline Si (poly-Si) gate electrodes by metal gate, which avoids such problems of poly-Si gate as gate depletion effects and/or dopant penetration effects. However, it has been reported that the properties of edges of metal gate could metamorphose after high temperature annealing. As a result, threshold voltage varies due...
The effects of antenna configuration, the electrically floating antenna and the electrically connected antenna to the substrate during plasma processing, on the charging damage of MOSFETs have been studied. The floating antenna adjacent to the gate antenna increases the degradation of both Q/sub bd/ and V/sub th/. The adjacent diode antenna significantly increases the degradation of Q/sub bd/ without...
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