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Increasing the output power or the wall-plug efficiency (WPE) of THz quantum cascade (QC) lasers is a topic of great interest, since it could have a major impact on applications. Once a high-performance active region is employed, the key ingredient is the laser resonator. Several effective solutions have been developed in by the scientific community [1, 2, 3]. More generally, periodic metal/semiconductor...
III–V semiconductor photonic crystal nanolasers are heterogeneously integrated on a SOI waveguides circuitry. We demonstrate this approach constitutes an efficient way to interface these ultimate lasers. Coupling efficiency and optical bistability will be discussed.
We report on the improvement of the thermal dissipation of hybrid III-V/SOI nanolasers by encapsulating the structures in Silica. Careful design was necessary to obtain theoretical quality factor above 106. CW operation was then obtained.
We report on optical bistability based on injection locking of hybrid III-V/Silicon-on-Insulator (SOI) nanolaser. Switching power is measured below 40μW. 30ps switching time is deduced from gain recovery time measurement.
The heterogeneous integration of III–V semiconductor lasers on a silicon waveguide platform using DVS-BCB adhesive bonding is reviewed. Both mW-level lasers and ultra-compact laser sources are discussed.
Heterogeneous integration of III–V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent...
Silicon photonics, enhanced by III–V semiconductors based optical functions, is one of the most promising technologies to achieve large-scale photonic integration taking advantage of the best of both materials. In this work, we study III–V/SOI hybrid structures that combine photonic crystal nanolasers with photonic wires. This approach is particularly interesting as it enables the achievement of compact...
Heterogeneous integration of III–V semiconductor compounds on Silicon on insulator (SOI) is one the key technologies for next generation on chip optical interconnects. Indeed, this hybrid platform combines the best of both material systems: on one hand, the CMOS compatibility and the predispositions of silicon to be used for fabricating an ultra compact low loss optical circuitry; on the other hand,...
Diamond Nanoparticles are added to BCB polymer in order to increase the thermal dissipation of InP-based photonic crystal cavity laser bonded on silicon. Optical measurement are performed to evaluate the enhancement of the heat sinking with nanoparticles density.
We report the fabrication of hybrid structures composed of III-V active photonic crystal bonded on top of silicon wires. Laser is obtained from slow light waveguides and from nanocavities made in an InP-based membrane containing quantum wells, the emitted light being coupled evanescently to the SOI wires.
The fabrication of 2D InP-based photonic crystal lasers accurately aligned with SOI wire waveguides will be presented. Low threshold pulsed lasing operation is achieved by pumping via the SOI waveguide.
We report on the fabrication of InP-based 2D photonic crystal lasers operating around lambda = 1.55 mum at room temperature, integrated with and evanescently coupled to Silicon-On-Insulator waveguides. Pulsed laser operation is obtained from a line defect photonic crystal waveguide accurately aligned (< 30 nm) on top the SOI circuitry. This active-passive integration is demonstrated using an adhesive...
Silicon photonics is a rapidly developing platform for integrated optics. Combining the low-loss passive silicon photonic circuitry with III-V based active optical functionality, we can combine the best of both worlds. We investigate a new optical platform based on the heterogeneous integration of InP-based active 2D photonic crystals (PCs) on SOI waveguides.
We report on the fabrication of InP-based 2D photonic crystal lasers operating around 1.5 mum at room temperature integrated and evanescently coupled to SOI waveguides. Laser operation is obtained from a line defect structure accurately aligned on top the SOI circuitry.
We report on a continuous wave laser based on a two-dimensional photonic crystal band edge structure operating at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. The dynamics of this laser is studied under ultrashort optical excitation, the temporal behaviour of the emission are accurately measured thanks to a technique with a 200 fs resolution. The measured temporal response of...
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