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A safe, compact and robust means of wireless energy transfer across the skin barrier is a key requirement for implantable electronic devices. One possible approach is photovoltaic (PV) energy delivery using optical illumination at near infrared (NIR) wavelengths, to which the skin is highly transparent. In the work presented here, a subcutaneously implantable silicon PV cell, operated in conjunction...
Heterogeneous integration of III–V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent...
Silicon photonics, enhanced by III–V semiconductors based optical functions, is one of the most promising technologies to achieve large-scale photonic integration taking advantage of the best of both materials. In this work, we study III–V/SOI hybrid structures that combine photonic crystal nanolasers with photonic wires. This approach is particularly interesting as it enables the achievement of compact...
Heterogeneous integration of III–V semiconductor compounds on Silicon on insulator (SOI) is one the key technologies for next generation on chip optical interconnects. Indeed, this hybrid platform combines the best of both material systems: on one hand, the CMOS compatibility and the predispositions of silicon to be used for fabricating an ultra compact low loss optical circuitry; on the other hand,...
Working with narrow beams (with width of few wavelengths) implies mechanisms that are limiting the efficiency of the second harmonic (SH) generation. One of them is diffraction, as narrow beams are broadening over a short propagation distance and their peak intensity decreases. The second one is the phase mismatch, since narrow beams have broad distributions in the wave-vector space and simultaneous...
Diamond Nanoparticles are added to BCB polymer in order to increase the thermal dissipation of InP-based photonic crystal cavity laser bonded on silicon. Optical measurement are performed to evaluate the enhancement of the heat sinking with nanoparticles density.
We report the fabrication of hybrid structures composed of III-V active photonic crystal bonded on top of silicon wires. Laser is obtained from slow light waveguides and from nanocavities made in an InP-based membrane containing quantum wells, the emitted light being coupled evanescently to the SOI wires.
Photonic crystal based nanolasers have sprung a lot of interest in the latest years due to the high optical confinement of the cavity. High quality factor cavities in conjunction with low electromagnetical volumes, allows to implement a significant enhancement of the spontaneous emission dynamics and hence a preferential funnelling of spontaneously emitted photons into the laser mode. Theoretical...
We report on the fabrication of InP-based 2D photonic crystal lasers operating around 1.5 mum at room temperature integrated and evanescently coupled to SOI waveguides. Laser operation is obtained from a line defect structure accurately aligned on top the SOI circuitry.
We report on a continuous wave laser based on a two-dimensional photonic crystal band edge structure operating at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. The dynamics of this laser is studied under ultrashort optical excitation, the temporal behaviour of the emission are accurately measured thanks to a technique with a 200 fs resolution. The measured temporal response of...
This work demonstrates pulsed and continuous-wave (cw) operations of photonic band-edge lasers at telecom wavelength (1.55 μm). This InP-based two-dimensional photonic crystal (2DPC) laser is integrated over a silicon wafer, opening new perspectives towards practical silicon-based photonics.
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