Heterogeneous integration of III–V semiconductor compounds on Silicon on insulator (SOI) is one the key technologies for next generation on chip optical interconnects. Indeed, this hybrid platform combines the best of both material systems: on one hand, the CMOS compatibility and the predispositions of silicon to be used for fabricating an ultra compact low loss optical circuitry; on the other hand, the versatility of III–V semiconductors for making laser sources and active devices. This approach was recently used for demonstrating laser emission [1,2], light amplification [1], modulation [3] and optical flip-flops [4].