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This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance...
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 µm length, 100 µm width and 1 µm thickness. Both designs have percentage of magnetoresistance...
This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously...
This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔVo/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 µA and reverse bias is 6 nV/T at the current 13.49 pA . Two modes of operation...
The electrical properties of OFET devices were studied as a function of the thickness of pentacene active layer. A bottom gate, top contact structure was investigated by measuring the electrical characteristics with 100 ??m channel length and comparing with the results of 2-D numerical simulation at various organic thickness layers. The saturated current at same gate voltage was increased when the...
This paper proposes a design of a yield improvement analysis tool for disk drive manufacturing. The emphasis has been put on optimizing the HGA manufacturing process. The manufacturing data were obtained from the data warehouse for our study. We propose a design framework that consists of a set of various algorithms for automatic data analysis. The framework is verified by the engineers and analysts...
For nanoscale devices, the source and drain electrodes in organic filed effect transistor (OFET) are usually placed on the opposite side of the insulator and gate electrode. While the conventional model to describe FET was extracted from the planar structure with all electrodes laid in the same side. Therefore the effect of the opposite side electrode OFET structure was investigated by using two-dimensional...
This project proposes the design and development of the meteorological portlets on the GridSphere portal framework. The portlets support the simulations of climate data with the MM5 modeling system and the visualization of the results through Vis5D. Our main goal is to provide an easy way for the researchers to work with MM5 and to utilize the Thaigrid infrastructure, where large computational resources...
Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of 0.8-mum CMOS technology was described. This phenomenon was also observed in the conventional NMOSFETs. This is because of hot-electron trap in the gate accumulating carriers (holes) along the channel region near the drain. That is, these holes effectively...
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