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This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously...
This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔVo/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 µA and reverse bias is 6 nV/T at the current 13.49 pA . Two modes of operation...
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