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As the development of semiconductor process, more and more advanced technologies were applied in the IC manufacturing. The device becomes more precise, and more sensitive to the minor process variation. Failure analysis challenge comes along with these advanced processes. Lithography process is one of the most critical semiconductor processes. The issue with this process has its own property. Based...
As semiconductor technology advance, NVM memory structure find more and more application in the IC product. Majority part of NVM is charge-based where charge can be injected into or removed from a critical region of a device. This storage cell is normally floating and cannot be accessed directly. So the analysis on this floating structure is quite challenge, especially on the specific cell of the...
Conventionally, Static Random Access Memory (SRAM) failures rely on memory bitmap for failure analysis. Static fault localization approach is ineffective except if the defect is large enough to cause a resistive short between the VDD and VSS nodes. However, it was observed that subtle defects that fall in the wordline (WL) of the pass gate transistor results in a partially turned-on NMOS with electroluminescence...
Embedded non-volatile memory (NVM) introduces additional thermal processes to a logic process flow and the impact from this extra thermal budget becomes more considerable with continued device scaling. This paper investigates the mechanism of SRAM VMIN degradation in a 40nm embedded NVM process and provides a solution to address the degradation caused. Failure analysis shows enlarged poly grain size...
This paper describes the effectiveness of using light induced Current Imaging — Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging...
Accurate extraction of the SPICE model parameter is critical in the CMOS IC design. However, it faces difficult issues in state-of-the-art MOSFET technology. First, the gate CV parameter extraction is challenging due to small values and many extrinsic components that need to be de-embedded. Second, the systematic offset of the gate critical dimension (CD) exists between test structures and circuits,...
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