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New germanium and boron base profiles are designed and tested for emerging lunar RF applications down to 43 K using SiGe HBTs. Device optimization in 1st generation SiGe HBTs to minimize the carrier freezeout and to suppress the heterojunction barrier effects without changing basic fabrication processes was attempted. Optimizing the device enhances fT by 20% and fmax by 70% as compared to a standard...
Minimum noise figure (NFmin) of SiGe HBTs under common-base (CB) configuration is analyzed through noise modeling, calculation and measurements and compared with that under CE operation configuration. Results show that the two configurations have similar NF min at low frequencies. At high frequencies, the CB configuration has higher NFmin than the CE configuration, while higher gain is exhibited by...
A new negative differential resistance (NDR) effect is reported for the first time in cryogenically-operated SiGe HBTs. A physical explanation based on heterojunction barrier effect (HBE) is presented, and confirmed using calibrated 2-D TCAD simulations. The ac consequences of this NDR effect and the impact of technology scaling on the phenomenon are also addressed
This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and beta at high injection
We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down...
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