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We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ~104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog...
While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the basic properties of amorphous silicon, and then outlines research trends, driven in large part by new applications. These trends include increased performance,...
In this work, a top-down approach has been adopted for the first-time to pattern single-crystalline Si NW on SOI substrates using planar technology processes. The two critical parameters of the nanowire are defined by the thickness of Si active layer and the width of a masking spacer. The NW has an elliptical cross-section having a semimajor axis less than 150 nm and the semiminor axis depending on...
We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving...
The carbon was incorporated in biaxial st-Si (stained Si) source/drain NMOSFET for channel strain enhancement. Due to ~52% lattice mismatch between silicon and carbon, the st-Si:C surface channel is under higher strain than that of st-Si, indicating that the carrier mobility can be enhanced significantly by theory. The resistance of st-Si:C with carbon increasing are similar with st-Si, and improved...
In this paper a-Si:H TFTs with the external the mechanical strain and bending cycles is studied. In addition, the trap states distribution is also discussed. Besides, the temperature distribution of a-Si:H TFTs on plastic substrate is an important issue for operation. A thermal conduction layer dissipates the accumulated heat during operation is designed and it calculates the temperature distribution...
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