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Butting and inserted pickup layout in MOSFETs leads to substrate resistance shunting effect and serious ESD robustness degradation. This work develops novel layout with external well/ diffusion resistance embedding between the substrate and the grounding terminal in the NMOS transistors. This layout method can greatly enhance ESD performance of the inserted pickup devices. The second breakdown current...
This paper develops optimization between electrostatic discharge (ESD) and latchup characteristics for a silicon-controlled rectifier (SCR)-incorporated Bipolar Junction Transistor (BJT) in a 0.18-$\mu \text{m}$ , 3.3 V process. This device is composed of a floating pMOSFET embedded in a parasitic n-well/p-sub/n+ region BJT structure. The floating pMOS gate is further coupled with an RC network for...
The paper proposes a distributed middleware architecture with Location-Based Service (LBS) features in a 4G LTE telecom environment to effectively facilitate the interaction between location-based data producers and consumers as well as to reduce the required backbone bandwidth by location-based service. The proposed distributed middleware architecture could not only upgrade the original 4G LTE base...
The cross-coupled pairs in CMOS are employed to the voltage controlled oscillator with surface acoustic wave (SAW) resonator. The problem of latch, which is not encounted in conventional LC oscillator, is essential in our case. With a careful design in bias this problem is solved. This oscillator has the advantage of inherent opposite polarity appeared on the terminals of SAW resonator, which leads...
The balanced SAW oscillator in the Colpitts configuration is studied. To enhance the start up the cross-coupled pairs are employed. Owing to the insulating feature of SAW resonator, the problem of latch may happen. With a careful design in the aspect ratio of CMOS transistors between main amplifier and cross coupled pair, this problem is solved. By the aid of inherent opposite polarity appeared on...
Raxiio frequency identification (RFID) has received much attention. The ac to dc conversion efficiency is crucial for long range application in UHF band. The front end of the passive tag combined with the broadband antenna at 915 MHz is investigated. Two subjects of high efficient charge-pump and antenna matching are focused. The chip is fabricated by TSMC 0.18 um 1P6M CMOS. The antenna is on the...
A new 3-10 GHz ultra-wide-band (UWB) low noise amplifier (LNA) is designed in TSMC 0.18 um CMOS process. Reactive matching of common gate configuration is extended to wide bandwidth using the Butterworth filter. A systematic approach to design a wide band low noise amplifiers is especially emphasized. The amplifier with on-chip filter spanning 3-10 GHz delivers 7 dB gain, 4 dB noise figure, and -2...
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