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Flexible electronic devices, such as flexible displays and wearable sensors, has shown rapid growth over the last decade [1]. Graphene is a promising material for the flexible devices, due to its high carrier mobility, flexibility and optical transparency [2]. Graphene device has been fabricated mostly through the process including thermal chemical vapor deposition so far, although the process requires...
We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier...
We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiNx passivation films. The carrier type of CNTFETs was controlled by forming condition of SiNx passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO2 substrate. The static transfer and noise margin...
In this study the effect of deposition of a high-k gate insulator by atomic layer deposition (ALD) technique on electrical characteristics of carbon nanotube field effects transistors (CNFETs) was investigated. Carrier-type conversion was caused by positive fixed-charges at HfO2/SiO2 interface. A technique compatible with Si VLSI technology to control conduction type of CNFETs utilizing interface...
The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Chemical doping using F4TCNQ was found to be effective in reducing not only the channel resistance but also the contact resistance....
The authors have investigated the effect of channel doping by low-energy ion implantation in carbon nanotube field-effect transistors (CNTFETs) with passivation films. Single-walled carbon nanotubes (SWNTs) are promising candidates for fabricating nano-electronic applications due to ideal one-dimensional structures. In particular, CNTFETs using semiconducting SWNTs as a channel are expected for high-sensitive...
In this study, we have applied atomic layer deposition (ALD) for the fabrication of CNT-FET biosensors.Biosensor operation was confirmed by CNT-FETs fabricated using the ALD passivation film. CNTs were grown on a SiO2(100 nm)/p+-Si substrate by alcohol catalytic chemical vapor deposition. Following the fabrication of the CNT-FETs, HfO2 film (50 nm) with a large dielectric constant was deposited on...
In this paper, the authors demonstrate the improvement of HfSiON pFET characteristics with F incorporation technique, which might be a powerful tool to lower Vth in pFET with both poly-Si and PC-FUSI gate. Using F implantation in channel region prior to HfSiON formation Vth lowering up to ~200mV is obtained without mobility degradation. Furthermore, impact of F incorporation in HfSiON is investigated...
F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering Vth and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the Vth shift is attributed to change in trap density
Novel field-effect transistor characteristics are demonstrated by using impurity-inserted double quantum wells. By controlling the resonant coupling with gate voltage, electron wavefunctions are delocalised or localised, resulting in the enhancement or suppression of ionised impurity scattering. Multifunctional performance including a large negative transconductance and frequency-multiplier action...
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