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We report optical and magneto-optical results as well as atomic force microscopy (AFM) and magnetic force microscopy (MFM) results for InFeSb samples prepared by laser ablation. AFM and MFM studies have revealed the presence of magnetic particles on the samples surface, whose sizes depend on the Fe content and substrate temperature. It has found that both optical and magneto-optical spectra are superposition...
Bulk heterojunction organic solar cells (OSCs) were fabricated by using the mist deposition method. The mist flow of two organic materials poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-Phenyl C61 butyric Methyl Ester (PCBM) was generated using an ultrasonic oscillator and deposited on substrates as active layers of OSCs. Their thickness strictly depended on the substrate temperature. The current-voltage...
A 1.3-μm-range metamorphic InGaAs laser with high characteristic temperature (T0 = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser has been achieved by inserting an electron stopper layer in the p-cladding layer.
In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half...
The paper presents the virtual and real investigations related to the fusing of PCB traces in high power applications. The reason of performing the research and related tests is that in real applications the current carrying capacity of PCB traces is different than the value presented in standards and datasheets or obtained after solving thermal equations. Based on the experimental results, the authors...
This paper first investigates the effect of substrate temperature dependence on performances of six-port reflectometer (SPR) designed for measuring complexity permittivity. The temperature-dependent effect on the substrate is described by the variation of dielectric constant (έr) and dissipation factor (tanδ). Here, two printed circuit boards (RO3003® and RO3010®) with two different substrate materials...
The microstructure and electrical properties of in-situ annealed carbon films is studied in this paper. The structure of the films is studied by transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The microstructure of the films strongly depends on the deposition temperature for the films deposited at high temperatures (higher than 400??C). However, at low temperatures...
In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperature of the HK substrate could be obtained from the curves of current densities varied with temperatures...
Stability of materials is of great technical importance for materials to be applied technologically. In this paper, a novel material-amorphous composite films of titanium and vanadium oxides films, which may have a very promising industrial application, were obtained by reactive dc magnetron co-sputtering deposition. The dependence of thermal resistance and square resistance stability of the samples...
This study deals with analyses of PTC (positive temperature coefficient) thick film resistor elements applied in LTCC (low temperature co-fired ceramics) technology. This study concerns the characterization of the electrical performance of PTC-elements placed in a different arrangement on a LTCC-multilayer substrate. Resistors are built-up on LTCC ceramic substrates and sintered in different configurations...
CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
The main problems which arise in Si CMOS devices while operated at low temperature are investigated. More specifically, the mobility modelling, the influence of impurity freeze-out on LDD resistance, the impact ionization substrate current, the Gate Induced Drain Leakage (GIDL) phenomenon are investigated over a wide range of temperatures (4.2-300 K).
An analytical model of the kink effect in MOS transistors is proposed. This model procures a comprehensive view of the kink effect in bulk silicon MOSFETs and, subsequently, in SOI devices. It is shown both experimentally and theoretically that the excess drain current induced by the kink effect is proportional to the body transconductance of the device operated at room as well as liquid helium temperatures.
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