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In this paper, the analog performance of the Asymmetric Self-Cascode structure of Fully Depleted SOI nMOSFETs has been evaluated with regards to the variation of channel width, through three-dimensional numerical simulations. The largest gain has been obtained using the narrowest transistor near the source and the widest transistor near the drain.
In this paper the analog performance of the Self-Cascode structure composed by SOI Nanowire nMOSFETs has been evaluated through experimental results. The influence of the channel width of the transistors near the source and the drain, and the back gate voltage variation have been evaluated.
This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.
This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.
This paper aims at analyzing, through two-dimensional numerical simulations and experimental results, the influence of technological parameters downscaling on the analog performance of Graded-Channel FD SOI nMOSFET transistors. Front gate oxide and silicon film thicknesses, channel doping concentration, total channel and lightly doped region lengths have been varied to target the highest intrinsic...
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