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Glasses containing bismuth oxide (Bi2O3) deserve large attention because of the broad band photoluminescence from 1000 to 1600 nm due to bismuth ions. The effect of the processing conditions (crucible type, melting temperature and Bi2O3 concentration) on the preparation of different GeO2-Bi2O3 glasses is presented. The influence of these parameters on the optical performance of the glasses has to...
Photonic integrated circuits suffer from silicon microring's high thermal susceptibility, and therefore a heater based control is necessary. Towards an on-chip control circuit development, we report the design of two basic devices such as a MOS Operational Transconductance Operational (OTA) amplifier and a Finite State Machine (FSM). The devices were designed and manufactured in XFAB's 0.6 μm technology...
A particular asymmetric superlattice (SL) with a structural defect was designed to operate as a quantum well infrared photodetector with detection energies in the mid-infrared range. The asymmetric quantum well infrared photodetector is based on InGaAs/InAlAs quantum wells lattice matched to the InP substrate. Due to the device asymmetry, it can operates in the photovoltaic mode (zero applied bias),...
Using several biosensors to form an array permits to increase the reliability of sensor systems, the parameters measured with additional variables and decreases the time needed to make distinct measurements. An array of several sensors, in this way, offer better functionality than is common with traditional arrangements. Our system, the multimodal array of enzymatic biosensors, is a device built using...
In this paper a statistical, compact model for bias temperature instability (BTI) degradation of MOSFET threshold voltage under cyclo-stationary operation is presented. The equations were derived using the framework developed in [1], assuming that BTI results from the trapping of charges by defects in the oxide and semiconductor interface. To account for the cyclo-stationary operation, the average...
Multijunction solar cells hold the actual world record efficiency, converting 46% of the solar energy into electricity on ground, and are the very basis of spatial missions' power supply. Multiple quantum well systems are one of the possible solutions to overcome a major technological challenge of this type of device, namely, finding materials with appropriate bandgap and lattice parameter that can...
The PIN sensor array in two technologies (bulk and SOI) is studied here, based on fabricated lateral PIN. Experimental data in non-radiation environment is used to adjust the models implemented in the numerical simulator that are latter used to evaluate the radiation analysis for heavy-ion particles. Near-Earth natural environment is composed of energetic protons, electrons, and heavy-ions coming...
An eight terminal silicon piezotransducer (8TSP) was designed to be used as stress sensor, however, sensors based in the piezoresistivity effect have a large thermal drift of their characteristics due the dependence of the piezocoefficients with temperature. In this work, the temperature effect over the piezotransducer is observed and characterized, important information for an accurate measurement...
This work investigates the impact of the dielectric material on the stressmigration based on modeling of 3D numerical simulations. Particularly noteworthy is the study for structures that incorporate so-called air-gaps. Contrary to the expected, the stress developed in the AG structure was larger than in the standard ones. The standard structure with SiCOH shows a magnitude of 450 MPa at the Cu/capping...
The dependence of ΔVHys on the stressing voltage for High-k Bi-layered InGaAs and InP substrate MOS capacitors is discussed in this work. Using different proportions of Al2O3 and HfO2 dielectrics on a 10 nm thick gate insulator, the influence of each layer and its defects on the variations of the flat-band and hysteresis voltage is studied. Results show that increasing the thickness of the Al2O3 interfacial...
As-etched macroporous silicon layers were passivated successful by electrochemical oxidation and then covered by a chemically deposited polyaniline layer. They were studied by Fourier transform infrared spectroscopy (FTIR) and Impedance electrochemical spectroscopy (IES). The results show that electrochemical method is an excellent alternative for silicon oxide growth within the porous structure,...
Electrospinning is a simple technique that has been largely used in the fabrication of nanofibers for a vast number of applications. In this work, we studied the formation of fibers containing polyvinylpyrrolidone (PVP), colloidal titanium dioxide (TiO2) nanoparticles, and ethyl alcohol as solvent. Titanium dioxide presents electrical, electrochemical, and catalytic properties that find several relevant...
This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 433, 870 and 928 MHz in the ISM band (industrial, scientific and medical). This mixer was designed with the on-semiconductor (former AMIS) 0.7μm CMOS technology. The Gilbert cell topology was selected due to its good figure of merit (FOM), which takes into account parameters such as the conversion gain (CG),...
This work proposes a new geometry for an Ion Mobility Spectrometer (IMS) in order to detect toluene, 2-propanol and water vapor. The IMS system was designed with a compact ionization chamber followed by another capable of selectively discriminate the range radius of the charged ions that collides to lateral sensing electrodes under a bidimensional distribution of high electric fields (0.0 to 27kV/cm)...
In this article an optical, morphological and electric characterization of P3HT/N2200 diluted on chloroform was done with three weight ratios (4:1, 1:1 and 1:4). This solvent was applied to verify if properties of mixtures of the two polymers provide characteristics for use as an active layer of an organic solar cell. The results show that the absorption spectra of the film mixtures have a large absorption...
This paper reports on the design and simulation of a bioamplifier, which can amplify bio-signals in the range of 1Hz up to 10kHz while rejecting DC offsets generated at the interface between electrodes and tissue. The fully-integrated bio-amplifier was designed in the 2 metals/1 poly 0.7μm CMOS process from the on-semiconductor. The bioamplifier shows a gain of 39.8dB in the range from 100Hz to 6kHz...
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