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Incorporation of self-aligned multiple patterning (SaMP) techniques have had limited uses in the industry due to a number of issues including: pitching walking, initial line width roughness (LWR) of photoresist, line edge roughness (LER) degradation of subsequent layer patterning. Utilizing plasma coating for PR hardening is attractive for 193nm lithography application. This paper presents the design...
The reversed self-aligned contact (R-SAC) scheme has been introduced into NOR flash memory technology. A key process challenge is the notorious trade-off among bowing profile control, shoulder nitride loss and process window margin. In this course, we investigated the potential of bowing profile optimization by applying an optimal experiment design (OED) to the SAC step. OED is an appropriate method...
The self-aligned contact (SAC) scheme has been imperative for NOR flash memory technology with the aggressively scaled drain space. The challenges mainly come from its high aspect ratio and the multiple issues to solve such as nitride loss loading between hole and trench, bottom profile and narrow process window. In this course, we investigated two integration schemes, the traditional SAC scheme is...
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