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This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear...
This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density...
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