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Key advances which enabled the InP photonic integrated circuit (PIC) and the subsequent progression of InP PICs to fully integrated multichannel DWDM system-on-chip (SOC) PICs are described. Furthermore, the current state-of-the-art commercial multichannel SOC PICs are reviewed as well as key trends and technologies for the future of InP-based PICs in optical communications.
Phototransistors built this way offer a low-capacitance, high-speed integrated solution for receivers, with decoupled absorption and amplification regions. Having the first stage of gain directly integrated with the absorption region of the transistor means that the sensitivity of the device can be greatly increased, thanks to it's low capacitance and high gain. Furthermore the fabrication of such...
Increasing the sensitivity of optical receivers is of paramount importance to reduce the energy cost of optical communications [1]. For this, the signal to noise ratio (SNR) of the front-end detector and amplifier must be improved. A very efficient way of achieving this is to introduce gain right at the detection level. Avalanche photo detectors (APDs) are a common approach for this, but bipolar phototransistors...
We present designs and simulations for a 32 GHz fT 3-terminal germanium bipolar phototransitor for high-sensitivity 10 GB/s receiving. We also experimentally demonstrate a preliminary, non-optimized phototransistor with 14 GHz fT built on silicon photonics.
We report on a compact germanium photodiode design where single crystal germanium wraps around a single mode silicon waveguide. A 32 µm long, 626 aF, p-i-n device has 0.8 A/W responsivity at 1550 nm.
We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.
We demonstrate the first monocrystalline germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler. We measure a responsivity of 1.2 A/W at 1550nm with a 2×4 µm2 germanium gate.
We propose a new, simple way to engineer the radiation patterns of subwavelength-scale metallic semiconductor cavities for coupling light from a nanoscale metal cavity into integrated waveguides uni-/bi-directionally with efficiency up to ∼90%.
We simulate a 33% quantum efficiency, 240 aF germanium photodiode coupled directly to a silicon waveguide. The variation of geometric parameters barely degrades the performance, showing promise for future fabrication.
Guidelines for designing an optical antenna for optimizing the performance of a nanophotodiode are proposed. A nanopatch design is simulated with over 70% absorption efficiency using germanium as the absorber.
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