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IGBTs have seen a continuous gain of importance since their introduction into the market, not only from the installed number of devices but also from the served applications. The expansion from small single device applications through industrial inverters up to large traction motor drives and HVDC converters have been possible mainly thanks to the fact that the IGBT devices can be paralleled and in...
In this paper, the destruction mechanism, which limits the short-circuit capability of high voltage IGBTs utilizing N-buffer structures will be described. The failure mechanism was studied using a combination of device simulations and experimental investigations of 3.3 kV, 4.5 kV and 6.5 kV IGBTs. It was found that the limiting short-circuit failure in these IGBTs is caused by a current filamentation...
In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The BIGT design concept differs from that of...
In this paper, we discuss the potential of realizing future applications with much increased output power capability utilizing the newly developed bi-mode insulated gate transistor (BIGT). The BIGT represents an advanced reverse conducting (RC) IGBT concept implying that the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing the same available silicon volume...
In this paper we demonstrate a fully functional high voltage and high current IGBT module rated at 3300 V consisting solely of reverse conducting (RC) IGBT chips. The RC- IGBTs were designed in accordance with the latest Enhanced Planar and Soft Punch Through technology while incorporating an integrated freewheeling diode in the same silicon volume. Future high power IGBT modules with RC-IGBT technology...
In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method...
The targeted 175degC junction temperature limit for the next generation of 1200 V IGBT requires safe and reliable operation of the devices at a temperature of 200degC. Due to the exponential scaling of several IGBT parameters, such high temperatures will subject the IGBT to new levels of stress, guiding chip designers and application people onto completely new grounds whose firmness is largely unknown...
The aim of this work is to demonstrate that future high power IGBT modules will be capable of providing electrical performance not matched to date in terms of low losses, soft turn-off characteristics, square RBSOA, and full over-current and over-voltage self-protection mechanisms under fault conditions. First ever prototype modules were fabricated incorporating heavily paralleled 3300V chips employing...
Solutions are presented to specifically address electromagnetic design issues in power modules, using numerical simulation methods. Four different aspects are described, each of which simulated using the appropriate numerical methods and tools: the characteristics of package components, the dynamic switching behavior, the module internal EMI, and the high voltage isolation
In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper covers current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We cover the challenges met by both device and systems designers...
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