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This paper describes IGBT and FWD design concept and measured results for the application of magnetic energy recovery switch (MERS) configuration for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower on-state voltage drop is strongly required for the IGBT and FWD chips even though their fast switching features are sacrificed. Therefor e, the...
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the...
Emergence of new power electronics configurations have historically been one of the important drivers for improvement of the IGBT technology. Development of new IGBTs is said to be a trade-off between saturation voltage, short-circuit capability and switching losses. With the common applications requiring high switching frequency and short-circuit capability, the saturation voltage performance has...
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