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A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode driver is proposed in this brief. The memory cell is constructed using a standard CMOS process without any additional masks to reduce the fabrication cost. The design method to achieve the required performance of various components is presented in detail. The technology has been demonstrated with a...
A CMOS-compatible high voltage multiplexer (HV MUX) for zero-additional-mask CMOS one time programmable (OTP) memory array mask is presented. The HV MUX uses standard CMOS with low input voltage and produce high output voltage beyond the VDD allowed by the process for programming the OTP memory array. By limiting the instantaneous voltage between any two nodes, the HV MUX can tolerate the high voltages...
A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were...
An output-capacitor-free multi-stage low-dropout regulator (LDO) with new compensation scheme is presented. This scheme relieves the requirement of compensation capacitor to be 1.2 pF by making use of the large gate capacitance of pass transistor as a large on-chip compensation capacitor. With this compensation scheme, the LDO can employ a multi-stage error amplifier for precise line and load regulation...
Microwave hydrogen plasma annealing is utilized to anneal Ti and Co films on p-type Si wafers to prepare C54 phase TiSi2 and CoSi2 at lower temperatures respectively, indicating the unstable phases are restrained in the solid state reaction due to the existence of microwave field which promotes atoms diffusion between nano-scale thickness metal film and Si substrate during anneal. The method is potential...
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