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Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge termination and of a resistive zone at the anode side are analysed with respect to the ruggedness of free-wheeling diodes. Therefore, we investigated the device...
The influence of small doping inhomogeneities on the behavior of current filaments appearing in p + –n − –n + diodes during the reverse-recovery period under extreme turn-off conditions is investigated. It is shown that depending on the strength and the distance between the inhomogeneities, different types of filament dynamics may appear, resulting in irregular or regular hopping...
The concept of controlled injection of backside holes (CIBH) is a novel and path breaking method for the optimization of the electrical characteristics of diodes. Buried p-doped layers at the cathode side of the diode inject holes in the base region during reverse recovery. Due to this injection the snap-off of the diode can be suppressed effectively. The main intention of this paper is to take advantage...
The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated freewheeling diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3 kV are analyzed using isothermal and electro-thermal device simulations.
Freewheeling diodes are one of the major components for modern IGBT modules and have to satisfy a number of demands. Especially in hard switching applications, such as inverters for industrial drives or UPS, a soft switching behavior of the diode is - besides low losses and high ruggedness - of major interest. A high softness reduces EMI problems and enables a faster turn-on of the IGBT. In this work,...
In this paper we present a novel 3.3 kV diode concept with anode side buried p doped layers. These p doped layers could retard the arising of the electric field and consequently postpone the onset of the dynamic avalanche at the pn-junction. Isothermal numerical simulation results suggested that this novel structure could permit balanced improvement of the static as well as the dynamic behaviors.
In this paper, we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn+ junction and accordingly avoid the avalanche generation at the nn+ junction. The CIBH diode concept provides, compared...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I-U-bistability occuring in the reverse recovery period leads to a non-uniform, current distribution in the diodes when they are turned off with a high current rate di/dl. In this paper we...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I -bistability occuring in the reverse recovery period leads to a non-uniform current distribution in the diodes when they are turned off with a high current rate di/dt. In this paper we compare...
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