The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A new concept of device structure that can selectively change the injection carrier type through a thin energy band engineering layer is proposed and demonstrated using the device simulation. As an example, the structure is applied to achieve the -type field-effect transistor using carbon nanotube network (CNN). Tin oxide layer placed between an Au electrode and a CNN channel is...
A 1.4 μm-pitch pixel of CMOS image sensor, which is the smallest to date, has been successfully developed and integrated into 8M density for the first time. To overcome the crucial degradation of the saturation charge and sensitivity, a novel photodiode structure extended under transfer gate and an elaborate optical design including very thin tungsten pixel routing with 65 nm-grade design rules are...
Technology and characteristics of 8-mega density CMOS image sensor (CIS) with unit pixel size of 1.75times1.75mum2 are introduced. With recessed transfer gate (RTG) structure and other sophisticated process/device technology, remarkably enhanced saturation capacity and ultra-low dark current have been obtained, which satisfy the requirements of high density digital still camera (DSC) application
CMOS image sensor (CIS) of 5-mega pixel density has been successfully developed with the smallest pixels (1.7mumtimes1.7mum) ever made. The newly introduced unique pixel architecture brought excellent optical symmetry and high electron capacity. Degradation of sensitivity and cross-talk can be suppressed with the optimization of the optical structure through proper color filter material and reduction...
5 mega CMOS image sensor with 1.9mum-pitch pixels has been implemented with 0.13 mum low power CMOS process. By applying 4-shared pixel architecture, 2.5V operation voltage, and tight design rules for some critical layers in pixels, high fill factor and the corresponding high saturation could be obtained. Image lag was sufficiently suppressed by pulse-boosting of transfer gate voltage and electrical...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.