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In both photo lithography with reduction projection printings and electron beam lithography with direct writing techniques, their resolutions are limited by the proximity effect caused by the diffraction in photo lithography and electron backscattering in electron beam lithography, respectively. To evaluate and clear them, computer simulation is very useful for sub-micron pattern fabrications.
The increased packing density and the superior performance of scaled down VLSI circuits owes much to the improvement in the resolution by the optical lithography, which has already cleared the one-micron lithographic barrier.
A positive resist with high sensitivity and stability named ASKA (Alkaline Soluble Kinematics using Acid generator) is described. A KrF excimer laser with a maximum laser power of 8.8 W and more than 109 pulses named PCR (polarization coupled resonator) is also presented. The result of KrF excimer laser lithography for 0.4-μm VLSI using this combination of ASKA and PCR technologies indicates...
Novel, very simplified, high-aspect-ratio, single-layer resist materials and process technology for KrF excimer laser lithography have been developed. They consist of a negative resist, a positive resist, and a surface treatment process called HARD (high-aspect-ratio resist pattern fabrication by alkaline surface disposal). Both the negative and positive resists are composed of an alkaline-soluble...
Trench isolation technology with boron implanted vertical side-walls is presented andproved to be useful for completely suppressing humps in subthreshold current and controlling finely narrow width effects of n-MOS FETs. The technology is promising one to realize submicron trench isolation less than 0.5 ??m.
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