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Introduction The α -particle induced soft errors(l) in DRAM's have become a major problem in reducing memory cell sizes. Intensive efforts have been made for studying charge collection mechanisms. diffusion(2) and funnellng(81. However. it is not clear yet how these mechanisms contribute to the critical charge Qc of various cell sizes quantitatively. In this paper. a simple model for estimating Qc...
The potential of optical lithography for production of VLSI circuits with design rules below 0.5 μm has been demonstrated by the performance of a first generation laser-based deep ultraviolet wafer stepper. The system, which has been described previously, consists of a fused silica reduction lens and illumination optics and a KrF excimer laser retrofitted to a commercial production tool [1-3]. It...
Based on a rigorous model for impact ionization, the hot carrier effect of MOSFET has been investigated in detail, using high-speed Monte Carlo simulation. The analysis revealed that the hot carrier effect is mainly affected by carrier temperature, but is suppressed by impact ionization.