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Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (fT), but these HBTs often suffer from too high current gains. This leads to low values for the open-base breakdown voltage (BVCEO). In this letter we demonstrate the use of a SiGe spike in the emitter as a practical method to increase the base current. Hence, the breakdown voltage is increased. At the...
A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C BiCMOS technology, a further improvement of the device RF performance is obtained, yielding devices with fT/fmax values of 210/290GHz and 255/210GHz.
A QSA airgap isolated HBT module, embedded in a 0.13mum BiCMOS technology, reaches fT/fmaxvalues of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress
In this paper, we presented a comparative study of the HBT reliability of scaled 200GHz SiGe:C quasi self-aligned HBTs integrated in a 0.13mum BiCMOS process with airgap DTI. The influence of scaling and airgap DTI under the three stress conditions (reverse emitter-base current stress, very high forward current stress and mixed-mode stress) on the reliability performance is reported. It was demonstrated...
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