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Velocity bunching technique is a tool for compressing electron beams in modern high brightness photoinjector sources, which utilizes the velocity difference introduced by a traveling rf wave at a relatively low energy. It presents peculiar challenges when applied to obtain a beam with a very high current and a low transverse emittance in photoinjectors. The main difficulty is to control the emittance...
When CMOS technology reaches 14nm and beyond, FinFET is implemented to further improve the device performance. Dummy poly removal process works as a key process to control the work function of metal gate, threshold voltage, and gate leakage. In this paper, we compared the dry etch process on 3 different commercial tools with 2 different approaches which shows that the gate leakage could have more...
GeSbTe (GST) is extensively researched due to its amazing phase changing property which can be widely employed in Phase Change Memory (PCRAM). GST etching is extremely critical process during the device fabrication. In this study, three different halogens or halides, including Cl-based, F-based and Br-based GST etching process were investigated. Results show Br-based etching process is nondestructive...
Trench-first-metal-hard-mask (TFMHM) approach has been widely utilized for copper interconnect formation since 45nm CMOS technology node [1–3]. Trench patterns are defined by MHM etch. These trench patterns not only control final Cu line shape and location, but also will affect the subsequent via patterning because via pattern is self-aligned (at least partially) to trench pattern [4,5]. With continuously...
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