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In this paper, an in-situ extraction of the four noise parameters (NFmin, Rn, Γopt) of SiGe HBTs in mmW range (D-Band, 130–170 GHz) is described. Because an external mechanical tuner features high losses in such frequency mmW range, the first idea was to integrate an in-situ tuner directly on the silicon wafer. The concept was then extended in order to integrate more elements on silicon.
This paper presents a reconfigurable multimode multiband power amplifier (MMPA) integrated in a 130nm SOI CMOS technology. In 2G mode, a saturated output power of 34.6/35.5dBm with a corresponding power added efficiency (PAE) of 61/53% was measured at 800/900MHz. In 3G/4G mode, a linear output power higher than 28/27dBm with a PAE higher than 34/33% while keeping adjacent channel leakage power ratio...
The various magnetic properties observed in actinide solids are largely determined by the degree the unsaturated 5 f shells retain an atomic localized character or lose it in an itinerant mode. Hence the investigation of magnetism (and of related properties such as low temperature electrical resistivity) has played a central role in understanding bonding in actinide solids. Between clear cut cases...
This chapter is an introduction to the main concepts underlying the present unterstanding of the physical properties of actinide solids. In the first half of the actinide series the elements behave as 5 f transition metals; 5 f electrons are then described as itinerant in metallic solids. Between plutonium and americium a cross-over from itineracy to localization, i.e. a true Mott transition...
A low power Software-Defined radio receiver operating between 400 MHz and 1.5 GHz is presented in this paper. The receiver is based on differential switched 4-path passive mixer architecture. The sampling frequency fixes the carrier frequency of the received signal and a simple RC time constant determines the receiver bandwidth. The mixer structure permits to implement flexible high-Q band-pass filters...
A reconfigurable output matching network (OMN) for multimode multiband power amplifier (MMPA) applications has been designed and implemented using SOI CMOS RF switches and switched capacitor. The proposed reconfigurable matching network covers up to ten E-UTRA frequency bands ranging from 700 MHz to 920 MHz and presents two different impedance levels. It has been designed with four distinct RF paths,...
This article provides a comparison between the performance of MOS and bipolar single stage power amplifiers (PA) in silicon germanium SiGe BiCMOS 55 nm technology from STMicroelectronics. The comparison is made in the same technology node and under similar design conditions (bias current, supply voltage, class of operation and silicon area). Moreover, slow wave coplanar waveguides (S-CPW) were used...
The aim purpose of this study is to evaluate the ESD protection using BIMOS transistor in the RF and fast swing application for advanced CMOS technology in 32 nm high k metal gate & bulk substrate. The ESD target is 1kV HBM and the RF one is 100 GHz broadband. Moreover the DC behavior is also performed. Thus, the challenge here is to be efficient in ESD protection with a minimum of parasitic capacitance...
Heterojunction bipolar transistors, SiGe, Reliability, DC and AC stress, Dynamic parameters, Low frequency noise, Mixer, Voltage controlled oscillator, Low noise amplifier, RF stress, SOA.
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents...
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents...
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents...
Shielded coplanar waveguides are promising candidates for the development of high quality factor transmission lines in millimeter‐wave frequency bands. In this article, state‐of‐the‐art experimental results carried out on a CMOS 0.35 μm low‐cost technology are presented. This letter especially deals with the benchmark of slow‐wave transmission lines in focusing on the impact of technology dispersion...
The effects of dc hot carrier stress on the characteristics of 60GHz power amplifiers on CMOS 65nm are investigated. The increase in the threshold voltage, the decrease in the transconductance and the output conductance of the MOSFETs caused by hot carriers leads to a loss performances of the PAs. A reliability study is first made on a 1 stage PA to validate the ageing model and the degradation explanation...
Two millimeter-wave (mmw) Power Amplifiers (PAs) designed in a 65 nm CMOS process with 8-metal layers and transistor ft/fmax of 160/200 GHz and complying with 125??C electromigration design rules are reported. The amplifiers are designed to first validate the passive and active millimeter-wave models and then study the MOS reliability at 60 GHz. In this way, the PAs design takes electromigration constraints...
A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching...
An improved analytical model for integrated microstrip line experienced on 45 nm silicon technology is proposed. This model is derived from previous classical ones used for PCB circuits. Improvements have been performed to take into account the sizing effects for integrated lines. The study is performed up to 110 GHz for different line widths and results accuracy allow implementing the model in CAD...
The present paper describes the physical layer of an ultra-wideband impulse radio (UWB-IR) communication system, together with its implementation in a fully integrated transceiver. The objective of this work was to design and test a low-power radio communication system for medium data-rate, short-range communication. The system is based on frequency hopping on-off keying modulation (FH-OOK) for transmission,...
Shielded coplanar waveguides (S-CPW) are promising candidates for the development of high-quality factor transmission lines in millimetre-wave frequency bands, from about 10 GHz to more than 65 GHz. In this paper, state-of-the art experimental results carried out on a CMOS 0.35 mum low-cost technology are first presented. These results open new possibilities for the development of low-loss compact...
This paper presents the simulation results of a BAW- based low power oscillator. The oscillator was designed using high-Q solidly mounted bulk acoustic wave resonators (SMR BAW) exhibiting quality factor around 2200. The oscillator is simulated using RF transistors of the CMOS 65 nm process from STMicroelectronics. The oscillator was optimized for low power purpose and consumes 50 muA from a 1.2 V...
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