In this paper, an in-situ extraction of the four noise parameters (NFmin, Rn, Γopt) of SiGe HBTs in mmW range (D-Band, 130–170 GHz) is described. Because an external mechanical tuner features high losses in such frequency mmW range, the first idea was to integrate an in-situ tuner directly on the silicon wafer. The concept was then extended in order to integrate more elements on silicon.
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.