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In this paper, an in-situ extraction of the four noise parameters (NFmin, Rn, Γopt) of SiGe HBTs in mmW range (D-Band, 130–170 GHz) is described. Because an external mechanical tuner features high losses in such frequency mmW range, the first idea was to integrate an in-situ tuner directly on the silicon wafer. The concept was then extended in order to integrate more elements on silicon.