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Most important technology for developing of wafer level packaging is studied in this paper. That is the process of drilling the via hole that are needed filling of conductive material for electrical connection or non-conductive material for reliability. Several kinds of drilling and filling methods of via holes for the interconnection were studied. The via formation for interconnection is based on...
Wafer level surface acoustic wave (SAW) filter package, 0.8times0.6 mm2, is drilled by laser via process. Via formation for interconnection is based on smaller package manufacture. LT (LiTaO3) which is base material of SAW filter is difficult to drill a small via by RIE (Reactive Ion Etching) because the RIE gets a very small etch rate and has wafer broken issue by thermal heating. So, our previous...
In this paper, we describes the wafer level surface acoustic wave (SAW) filter package, 1.0times0.8 mm2, which is applicable for radio frequency (RF) stage in mobile phones. The SAW filter is reduced in size and thickness by using a 4" wafer level package process technique. The technique uses interconnection via and LiTaO3 (LT)-LiTaO3 (LT) wafer bonding structure. The interconnection via is formed...
Miniaturization is one of the driving design goals for large number of wireless applications, especially mobile phones. These market trends call for more thin and small size components with high reliability performance. In this paper, we describes the wafer level surface acoustic wave (SAW) filter package, 1.0 times 0.8 mm2, which is applicable for radio frequency (RF) stage in mobile phones. The...
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