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We show 64 GBd 4ASK signaling with a silicon-organic hybrid Mach-Zehnder modulator, allowing data rates of up to 128 Gbit/s. The device is operated at room temperature and at 80 °C.
This paper shows how a buried aluminum eutectic drop at the cathode-side of a high-voltage power diode can affect the device behavior. The aluminum drop driven by thermo-migration, moves from the contact metallization some micrometers into the chip and forms a buried eutectic. Thermomigration [1] becomes stronger as the temperature gradient increases. High temperature gradients can be achieved at...
In this work, difference - temperature (DeltaT) sensors based on the Seebeck effect integrated into a common drain smart power MOSFET technology are presented. The sensors generate a voltage signal proportional to the DeltaT. The highest Seebeck coefficient measured was 0.92 mV/K. This result was achieved with a p - doped silicon and n+ - doped poly silicon Seebeck DeltaT sensor. Power MOSFETs with...
In the paper the surge current capability of different power diodes made of silicon carbide (SiC) providing Schottky- and merged-pin-Schottky (MPS) structures are investigated. The diodes were impinged with surge current pulses of different shape and time. Depending on the diodes and there structures, they provide a different responsiveness. In some cases apart from the diode design it's time constant...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I-U-bistability occuring in the reverse recovery period leads to a non-uniform, current distribution in the diodes when they are turned off with a high current rate di/dl. In this paper we...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I -bistability occuring in the reverse recovery period leads to a non-uniform current distribution in the diodes when they are turned off with a high current rate di/dt. In this paper we compare...
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