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With the advantage of low power consumption, Non-Volatile Memories (NVMs) has been widely used in hybrid memory architecture. This paper presents a page replacement method based on NVM-DRAM hybrid main memory system for low power and consistency guarantee, called EAPR The energy consumption of page access in DRAMs and NVMs can be calculated according to the memory access, and the pages are migrated...
This paper focuses on quickly identifying the unknown or time-varying random latency probability (RLP) of the measurements in the nonlinear networked multi-sensor system by resorting to the efficient implementation of maximization likelihood (ML) estimation. Firstly, the full-probability likelihood computation is equivalently transformed into a log-likelihood function summation form parameterized...
Growth of NaCl and Fe/NaCl/Fe Magnetic tunneling junctions on Si (100) has been achieved by using a high vacuum electron-beam deposition system. Epitaxial tunnel junctions turn out to be prone to pinholes as well as electrode oxidation. Instead, the best tunneling magnetoresistance we have achieved in this system is on polycrystalline tunnel barriers with thin Mg insertion, and reaching 22.3% at room...
Integrated sensor arrays on CMOS instrumentation chips are attractive to many biological and biomedical sensor applications. However, the packaging of CMOS circuitry for use within a liquid environment remains as an open challenge. Reliable post-CMOS electrode fabrication and packaging processes that are critical to the development of integrated electrochemical biosensors are presented in this paper...
We present our group's recent research progresses of mid-infrared (mid-IR) surface emitting two-dimensional (2D) photonic crystal (PC) lasers via MBE-grown IV-VI group semiconductors on silicon substrates. The device design was based on a 2D micron-level honeycomb structure, in which complete photonic bandgaps will form in mid-IR region. For the initial demonstration, two intensive PC modulated mid-IR...
In this study, a method to test blind TSVs in 3D IC integration for their electrical performance is investigated. Emphasis is placed on the development of a novel blind-TSV method by electrical testing on the top side of the TSV-wafer before backgrinding. Through leakage current testing, it is possible to determine whether there is short circuit between blind TSVs. Most conventional measurement methods...
An oxide/silicon core/shell nanowire (OSCSNW) MOSFET is proposed. Its fabrication process and performance are described in detail. The ION/IOFF ratio of the OSCSNW is improved by more than one order of magnitude compared with traditional nanowire (TNW) devices. Excellent scaling characteristics are also observed from the OSCSNW MOSFETs with minimal threshold voltage roll-off, drain induced barrier...
Laser micro/nanopatterning by Contact Particles Lens Array (CPLA) has been extensively utilized but it is limited to hydrophilic surfaces. A technique is presented here to transfer CPLA by an adhesive surface to pattern hydrophobic surfaces.
The performances of thin-film-transistors (TFTs) with the channel region crystallized by metal-induced-lateral-crystallization (MILC) before and after patterning are compared. TFTs are experimentally fabricated to study current drive, off-state leakage current, subthreshold slope, threshold voltage, and drain induced barrier lower (DIBL). The superiorities of TFTs with channel crystallized after patterning...
The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×1010 cm-2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3μm emission from InAs quantum dots at room temperature. PL measurements at 77K, Full Width at Half-Maximum (FWHM) is about 60meV.
The characteristics of force transferring in parallel capacitor is presented, the external force applied on one plate can be transferred to another with a reverse direction and changed magnitude by coupling effect of mechanical domain and electric domain. The main principle of such behaviors is analyzed, and the relation of input and output is calculated by analytic method, it is indicated that the...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were...
We report the growth of self-organized InAs/Sb:GaAs quantum dots (QDs) on silicon (Si) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). High density QDs aligned along [0-11] direction was obtained. These QDs exhibit ground state emission at 1.3 mum at room temperature (RT).
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