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We fabricated CNW-FETs using a self-alignment process. We will discuss the plasma processes which improve the device properties of CNW-FETs, such as the gate leak current by O2 plasma etching and internal electrode contact by H2 plasma. H2 plasma etching also reduces the noise power spectral density of the drain current, and noise spectroscopy is useful in examining device properties and improving...
The sugar chain modified grapheme FET was applied to selectively detect the human type influenza virus and bird type influenza virus. Instead of the real virus, the pseud virus such as Lectin was used for the experiment for the safety. The human type pseud virus selectively reacts with the human type sugar chain which was modified on the grapheme surface and vise versa.
Graphene-FETs have a large potential for sensing biomolecules, due to graphene's high carrier mobility and high responsivity to charged biomolecules. Debye screening is one of the major limitations in graphene-FET biosensing, since many biomolecules are larger than the Debye length in physiological conditions. This limitation is overcome when the biomolecules are detected using their small reaction...
Graphene is suitable material for keeping electron spin states and expected for spintronics devices because of weak spin-orbit interaction and weak nuclear spin interaction. From this reason spin-correlation phenomena are investigated in graphene. Kondo effect is forming spin singlet state between electrons in leads and a dot and one of the spin correlation effects in quantum dots. Here, we will report...
So far there has been little research into the effectiveness of data parallel machines for relational database processing. We designed a data parallel relational join algorithm which includes external file I/O operations and implemented it on the CM-2 with the disk array called DataVault. We also evaluated its performance.
Nano-carbon materials are promising for use in future electronic devices. Their superior properties are derived from the low dimensional structure based on the two dimensional carbon (graphene) sheet. Carbon nanowalls (CNWs) are nano-carbon materials comprising a few layers of graphene. However, controlling the position of CNWs in the devices is difficult during the growth process. This is the limitation...
Nano carbon devices are promising for the next generation devices. Recently, a single-layer graphene has also been developed as nano-devices. For the device applications, there are several reasons why we should control the noise. Of course, the reduction of noise is one of strategies for nano devices as the noise might be increases for nano size devices including Si devices. On the other hand, noise...
This talk shows the real merit of nano size of nanocarbon material by using the feature of electric field concentration effect which enable 10∼100times low power consumption and single charge treatment becomes possible even at room temperature. These features overcome the limit of the present Flash memory. The parallel mulch channel of nanocarbon with various threshold voltages enhances the “stochastic...
In this paper, three kinds of devices and applications of nano carbon materials, i.e., carbon nanotube and graphene are introduced. 1) Using the feature of the nanostructure of carbon nanotube, quantum nano memory which can store the single charge one by one at the interface of the all arounded double stacked gate insulator was realized. 2) Only by modulating the gate bias, the particle nature and...
On the recent developments in nano devices, carbon nanotube (CNT) is one of the candidates for next generation devices. For device applications, it might be the problem that CNTs show large noise because of large surface area. However, sometimes nonlinear systems have advantages in the working with noise. In stochastic resonance (SR), noise could enhance the working properties of devices. Therefore,...
Label-free immunosensors based on aptamer-modified graphene field-effect transistors (G-FETs) were realized. Immunoglobulin E (IgE) aptamers were functionalized on the graphene surface. From atomic force microscopy, functionalized IgE aptamer with approximately 3 nm height was observed. And the drain current of the G-FETs increased after IgE aptamers functionalized on the graphene channel owing to...
Stochastic resonance (SR) in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance their weak-signal response. When weak pulse trains were applied to the gate of a CNT-FET operating in a subthreshold regime, the correlation coefficient between the input and output voltages increased upon addition of noise with optimized intensity. SR was observed both in air and in solutions...
We have fabricated floating-gated carbon nanotube field-effect transistors (CNTFETs). Au floating dots in the device are expected to act as charge storage nodes. The fabricated floating-gated CNTFETs clearly exhibited memory effect. Furthermore, single-electron memory was demonstrated based on floating-gated CNTFETs. Quantized shifts in the threshold voltage as a function of charging voltage and retention...
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