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In this paper, a moldless stack dispensing method to form an light-emitting diode (LED) lens at the wafer level is presented. This method uses a dispensing process to form a lens with high $H/L$ ratio, where $H$ and $L$ stand for the height and the base length of the lens. Silicon wafer is used as the substrate. V-groove trenches are made on the surface of the wafer to define the size of the...
In this paper a moldless stack dispensing method to form an LED lens at the wafer level is presented. This method uses a dispensing process to form a lens with high H/L ratio, where H and L stand for the height and the base length of the lens. Silicon wafer is used as the substrate. V-groove trenches are made on the surface of the wafer to define the size of the substrates. In the dispensing process...
Solid state lighting is a good alternative light source with reduced energy consumption. Light-emitting diode (LED) is very efficient in turning electrical energy into light. LED has a number of advantages over the traditional light sources. The optical performance of the LED component is very critical. In general, white light can be obtained by applying phosphor on a blue LED chip. The blue light...
Flip chip is one of the packaging techniques for high-performance components. There is a greater demand on integrating more functions in a smaller chip nowadays. This leads to the increase of I/O density. Organic substrate is the bottleneck of the high-density packaging. A silicon interposer with through-silicon vias (TSVs) is commonly used to provide a platform with a high wiring density to redistribute...
In the fabrication of system-in-package (SiP) devices, wafer bonding is a common yet very important process. The technologies widely used nowadays for wafer bonding include direct wafer bonding and intermediate layer bonding. Fusion bonding, one of the direct wafer bonding techniques, requires a processing temperature up to 800-1000°C to create strong covalent bonds between wafers. Some devices, however,...
A novel SiGe HBT low noise amplifier (LNA) was designed by adopting the feedback resistors, which are low cost and implemented easily in VLSI technology. Due to the absence of on-chip spiral inductor, the die area of this novel LNA decreases noticeably. The novel resistive feedback structure of the LNA comprising a shunt feedback loop and a series feedback loop, wherein the shunt feedback loop is...
In this paper, an innovative application of an existing nondestructive inspection, i.e, time-of-flight mode of scanning acoustic microscopy (SAM), was proposed for the measurement of through silicon via (TSV) depth. A feasibility study was performed on a dummy wafer with various sizes of TSVs to evaluate this method. From the image reconstruction of B-scan SAM, the depth of TSVs can be clearly identified...
Phosphor converted LEDs (pc-LEDs), which employ blue LEDs with yellow phosphor deposition to generate white light illumination is a widely used solid-state lighting source. This paper presents the integration of two major processes, namely, phosphor screen printing and moldless encapsulant dispensing, for wafer level pc-LED packaging. In the present study, the processing procedures and parameters...
This paper reports on the theory, implementation and experimental results of a novel method used to identify the coupling forces ratio in MEMS vibratory gyroscopes. This identification method is based on the force-displacement phase relationships in second-order spring-mass system and fourth-order coupling system. Experimental data under different temperature and vacuum indicates that the sensitivity...
On-chip spiral inductors with high quality factors are very important in many RF circuits. In this paper, spiral inductors are analyzed to study the influence of substrate and spiral structure on an inductor's performance in the multi-GHz frequency range. Firstly, the inductors with different substrate conductivity, thickness and permittivity of the dielectric layer are compared, and a general guide...
This paper presents the fourth order vibratory micromachined gyroscope prototype with coupling forces between two modes and the coupling error expression which reveals all the factors affecting the amplitude of the error. A detailed discussion has been performed to determine that the diversity of structures of drive combs and sense combs is the main source of the Quality factor in drive mode varying...
A novel encapsulation process for wafer level LED arrays is presented. In this process, 4 inch P-type single crystal silicon wafers served as the substrates for flip-chip mountable LED chips. The wafer substrates were fabricated by wafer level lithography and plating process. An UV curable epoxy was applied as the encapsulant. The encapsulation process takes advantage of square trenches fabricated...
Considering the noise correlation term between collector and base current shot noise, there mainly are four noise parameter models of SiGe HBTs, including the unified noise model (UNI), two SPICE noise models (SPN1, SPN2), the thermodynamic noise model (TDN). A comparison of these models was investigated in this work. A SiGe HBT based on BiCMOS process was fabricated and its S-parameters and Minimum...
High performance 65-nm technology (Lpoly=45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using direct silicon bonded (DSB) wafers and a solid phase epitaxy (SPE) process. The pFET performance is improved by 35% due to hole mobility enhancement on (110) surfaces as compared to (100) surfaces. nFETs on SPE-converted (100) surfaces exhibit...
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