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The ITRS working group has identified mask alignment and overlay control as a technology roadblock with no known solutions beyond the 65 nm node. Mechanical stress induced by thermal processing critically influences the distortion and warpage of wafers. This paper investigates the wafer distortion between source/drain and contact masking steps. In the experimental part of this work we demonstrated...
Some RTP chamber non-uniformity is due to the lamp arrangement geometry. An internally written simulation program was written to reproduce this non-uniformity. The results of the simulation were successfully tested against experimental results. The simulation then lead to finding lamp types and lamp combination recipes which decrease overall non-uniformity in the RTP chamber by 40%
Radiative properties of thin films are derived based on the concept of optical coherence theory. Instead of the previous approach of deriving the property formulae based on the degree of coherence, a direct integration to obtain the averaged properties over a finite spectral resolution is developed. The resulting analytical formulae are in excellent agreement with the prior work. The formulae are...
A thermometry testbed designed for the testing, analysis, and calibration of light pipe thermometers and thermocouple-instrumented silicon wafers used in RTP tools has been constructed, and comparison of measured wafer temperature distributions on the instrumented wafers with light-pipe radiation thermometer measurements have been carried out. The test chamber has been modeled using detailed Monte...
The mechanism of annealing silicon implanted layers has been a subject of debate for more than three decades. The great majority of the research work is restricted to only phenomenological results and elaborating changes in the resistivity of annealed layers. Less obvious parameters such as mobility or carrier lifetime are investigated only occasionally. Restrictions on the duration of thermal exposure,...
We present results on ultra-shallow junction formation for the sub 65 nm CMOS node by means of a long pulse laser thermal process (LP-LTP). This method achieve to form abrupt and ultra-shallow junctions with low resistivities, but the different irradiated structures like transistor gates need to be preserved. To assess the integration of the laser process in the fabrication of a CMOS device, we studied...
We have investigated the formation of NiSi dependence on three types of annealing systems: annealing systems-I, -II, and -III. The annealing system-I transfers heat by radiation from tungsten halogen lamps in a N2 atmosphere to the wafer and the annealing system-II by conduction from a heated hot plate in vacuum to the wafer. On the other hand, annealing system-III uses a combination of convective...
The design of electrical pulse forming networks (PFN), using multiple coils and energy storage capacitors, has a profound effect on the intensity and temporal shape of the radiant flash emitted from a flashlamp. In addition, the geometrical dimensions of a flashlamp control its electrical impedance (i.e. its interaction with the PFN), and also its explosion energy (i.e. its lifetime expectancy). We...
The design of wafer processing equipment needs to continuously evolve and respond to the challenges of the future. In this article, we present the evolution of rapid thermal processing (RTP) in the transistor manufacturing environment with emphasis on production-worthy performance over a temperature regime that addresses the sub-400degC processing requirements. Temperature and thermal budget control...
As device dimensions have reduced to nanometer length scales, rapid thermal processing (RTP) has emerged as the key approach for providing the low thermal budget and ultra-pure process conditions that are essential in advanced fabrication schemes. As further progress in electronic technology becomes increasingly dependent on success in rapid development cycles that include both materials innovations...
Various suicides are being used as ohmic contact materials for advanced silicon technologies. Due to the requirements for low contact resistance, no linewidth dependence and minimal thermal budget, different suicides are being adopted and modified to achieve the optimum characteristics. TiSi2 has been used to the 130 nm technology node with CoSi2 to the 100 nm node. Recently NiSi is being used to...
A hot wall-based low temperature annealing system using resistively heated, stacked hot plates was designed and tested for low temperature (100~500degC) annealing applications for 200 mm and 300 mm wafers. The system is designed to process five wafers simultaneously for productivity enhancement purposes. Thermal properties of the system and wafer temperature profiles during low temperature annealing...
Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures...
A major obstacle to the widespread implementation of rapid thermal processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers (LPRT) are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe...
The continued scaling of devices in accordance with Moore's law requires activation of some implants such as the source-drain extensions, SDEs, with as little diffusion as possible. New options in thermal processing are described and compared. Thermal flux annealing is the regime where power density is high enough to cause local heating but not so high as to eliminate heat transfer entirely. If energy...
Infusion processing using gas cluster ion beam (GCIB) technology provides several new capabilities in the areas of ultra shallow junction formation and localized or blanket SiGe formation resulting in strained-Si. This room temperature process requires only solid phase epitaxy (SPE) anneals (<700degC) for diffusionless activation and high quality SiGe or Ge formation. Initial tests indicate all...
49BF2+ implanted wafers were annealed in the temperature range of 900degC and 1100degC using a single wafer rapid thermal furnace for 30 sec to 1800 sec under N2 ambient at atmospheric pressure. Sheet resistance and its uniformity were measured. Boron and fluorine depth profiles at different annealing temperatures and times were analyzed using secondary ion mass spectroscopy (SIMS). The minimum...
Since pyrometric thermometry is a noncontact method, it has great promise as a technique for monitoring silicon wafers during rapid thermal processing (RTP). Absolute values of surface emissivity are required when making pyrometric temperature measurements. One approach to obtaining these values is the use of emissivity compensated pyrometry, where a reflectometer is integrated into the pyrometer...
Many rapid thermal processing (RTP) tools are currently monitored and controlled with lightpipe radiometers (LPRTs), which have been limited to measuring temperatures above 500degC because of the low signal level below 500degC. New commercial LPRTs couple the optical detector directly to the lightpipe, eliminating the signal loss from optical cables. These cable-less light pipe radiometers (CLRTs)...
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