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A variety of new materials and improvements on currently used materials is given to show how the manufacturing productivity of semiconductor equipment is enhanced. With an initial introduction of seals and their elastomers, the materials representing mechanical parts of the systems are reviewed. Through a number of newly developed manufacturing techniques, the mechanical parts' performance is improved...
In this paper, we report on seal performance and degradation mechanisms under a range of plasma processing conditions for several fluoroelastomer materials. Both direct and indirect plasma sources were used and the location of the test samples was varied to impact the chemical versus physical etching mechanisms. Perfluoroelastomer o-rings were exposed to NF3, O2, CF4, or SF6 plasmas. The weight loss...
A review of materials and optimization of seal designs is given emphasizing performance enhancement of manufacturing equipment. Various attributes are delineated as they pertain to aggressive temperature and chemical environments.
A review of materials and optimization of seal designs is given with emphasis on the requirements for semiconductor manufacturing equipment. Various attributes are delineated as they pertain to aggressive temperature and chemical environments.
Nickel silicide is becoming the choice for sub 90 nm technology and is being utilized for emerging metal gate technologies. [(F.F.Zhao et al., 2004)(Z.Krivokapic et al., 2002]. During the formation processes, the diffusion of Ni in conjunction with the phase transition needs to be controlled to minimize defect formation as such defects contribute to current leakage within devices. It is shown that...
Various suicides are being used as ohmic contact materials for advanced silicon technologies. Due to the requirements for low contact resistance, no linewidth dependence and minimal thermal budget, different suicides are being adopted and modified to achieve the optimum characteristics. TiSi2 has been used to the 130 nm technology node with CoSi2 to the 100 nm node. Recently NiSi is being used to...
A hot wall-based low temperature annealing system using resistively heated, stacked hot plates was designed and tested for low temperature (100~500degC) annealing applications for 200 mm and 300 mm wafers. The system is designed to process five wafers simultaneously for productivity enhancement purposes. Thermal properties of the system and wafer temperature profiles during low temperature annealing...
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