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Physical Unclonable Functions (PUFs) leverage silicon process variations to generate unique keys or hardware identifiers. A common PUF mechanism is based on uninitialized power-up states of bistable storage elements, but any bias in these storage elements will reduce their sensitivity to process variations and induce correlated outputs. Alternatively, a high quality PUF can be created by exploiting...
This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A low common mode coupling capacity of 1 pF and good electrical insulation of the gate driver power supply are achieved by using a current-loop AC-bus power supply. The power semiconductor is protected against unintentional self-turn-on by a low resistance gate path that is active while the gate driver is...
In this paper an implementation technique for Field Programmable Gate Array (FPGA) devices of two Sorting Networks (SNs) used for control of Modular Multilevel Converter (MMC) is presented. In such applications, the classical sorting algorithms are based on repetitive/recursive loops, and they are usually implemented in microcontrollers or DSPs. However, they are not convenient for hardware implementation...
A novel Jitter Cancellation Circuit (JCC) that reduces deterministic clock jitter induced by supply noise is designed. High Speed IO interface circuits require low deterministic clock jitter in order to meet the timing budget. Supply noise is a primary contributor of deterministic jitter. As data rates are scaling to higher frequencies, the acceptable jitter due to supply noise is decreasing. For...
Flash memory is widely used, especially for mobile applications, as nonvolatile memory storage. In this paper, we present a Flash memory design based on Silicon on Ferroelectric-Insulator FET (SOFFET) device. This device has shown tremendous potential for various ultra-low-power (ULP) applications. SOFFET has the potential to provide high performance, multi-VT design, strong threshold voltage control,...
This paper presents duality of PWM (Pulse Width Modulation) strategies between current and voltage source AC/DC converters and the relation between PWM strategies for suppressing either AC harmonics or DC ripples. In addition, the authors propose the PWM strategies of a voltage source AC/DC converter which have the duality of the PWM strategies of a current source AC/DC converter without extra logic...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
The series connection of insulated gate bipolar transistors (IGBTs) allows the operation at voltage levels higher than the rated voltage of one IGBT. However, the technology has not been widely applied due to transient voltage unbalance. Asynchronous gate drive signals, which cause series-connected IGBTs not to turn-on and turn-off at the same time, result in serious unbalanced voltage sharing. This...
The 15kV SiC IGBT (2 μm buffer layer) with chip area of 8.4 × 8.4 mm2 is the state of the art high voltage device designed by Cree Inc. This device is expected to increase the power density of converters and the demonstration of the device in applications like Solid State Transformers has been published. Therefore, it is interesting to investigate the performance of the device in very high voltage...
A 100-A, 850-V, solid-state circuit breaker (SSCB) having silicon carbide transistors and diodes was developed. The SSCB conducts 100 A continuously with air cooling in a 32 square-centimeter footprint. It is normally off and unidirectionally blocking, and has a configurable trip response allowing a range of overcurrent transients to be conducted, while maintaining a fast trip response at its fault-current...
This paper presents an active compensation device for common-mode (CM) voltage elimination in 3-phase space-vector pulse-width-modulated (SVPWM) inverters. The proposed device consists of a single-phase 2-level inverter (H-bridge) which supplies a compensating voltage to the inverter via a step-up common-mode transformer tied to all three phases at the output. The H-bridge active filter is supplied...
The paper presents a new bridgeless Power Factor Correction (PFC) topology, using a recently proposed controllable LCL filter, namely Active Virtual Ground (AVG) to achieve efficient power conversion and high frequency (HF) common mode voltage (CM) reduction. The proposed PFC circuit consists of high frequency semiconductors for shaping inductor current, and low frequency semiconductors to form two...
This paper reports cascaded operation of 1200V normally-on SiC JFETs in a solid state circuit breaker (SSCB) designed for medium voltage DC systems. The SSCB detects the short circuit fault by sensing the voltage rise between its two terminals and consequently uses this fault condition to power up the control circuit to turn and hold off the SiC JFETs to interrupt the fault current. Voltage sharing...
Ferroresonance is a complex phenomenon in power systems for its very complicated behavior. This paper proposes a new method for ferroresonance behavior analysis using it steady state peak voltage value distribution on a three-dimensional space, by which the peak voltage behavior can be clearly detected with the change of the system parameters. Then, a new pulse suppression strategy for ferroresonance...
Recently published experimental work on evolution-in-materio applied to nanoscale materials shows promising results for future reconfigurable devices. These experimental results are based on disordered nanoparticle networks, without a predefined design. The material is treated as a black-box, and genetic algorithms are used to find appropriate configuration voltages to enable a targeted functionality...
This paper presents an output-capacitorless low-dropout (LDO) regulator based on improved flipped voltage follower power stage for use in power management circuits. A new error amplifier (EA) structure, named as gain-bandwidth enhanced EA, is embedded in the LDO regulator. The LDO regulator is designed for the input and output voltages of 1.2 V and 1 V, respectively. Fast transients, low overshoot...
GaN HEMT is recognized to be the focus of Switching Power Supply due to its high electron mobility, high temperature and breakdown voltage and low parasitic capacitance. Aiming at the negative voltage turn-off characteristic and the short-circuit problem of the Depletion-mode GaN HEMT devices, a Combination Switch Circuit of GaN HEMT device and enhanced MOSFET, and the drive circuit of quick turn-off...
The paper describes operation and design of a memory retention LDO regulator. The LDO regulator is operating in a very wide range of the output currents (up to 100 uA) with a very small quiescent current (in the range of 100–300 nA). In the proposed circuit this range is achieved using a nonlinear translinear cell added to the the unity gain stage (voltage follower). The cell provides the load controlled...
Vibrational energy harvesting is an appealing power source for self-powered sensors, especially in recent trend of internet-of-things (IoT). Pervious studies had focused on extracting the vibrational energy with very few implementing an efficient load interface. This article describes an energy extraction mechanism for electrostatic MEMS vibration energy harvesting systems. An autonomous load interface...
An electronic over current breaker (OCB) for DC-grids without the need of additional sensing circuitry is presented. The OCB consists of standard Si-MOSFETs and is cascoded with SiC-JFETs for increased blocking capability. The over current detection threshold can be adjusted in a wide range. Due to the lack of additional sensing circuitry, the detection and clearing of a fault current is extremely...
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