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The anodic bonding technology has been widely utilized in the packaging of the microelectromechanical systems (MEMS), but its relatively high bonding temperature, sometimes relatively weak bonding strength due to micro-bubbles generated along the bonding interface prevent its wider application. In this paper, the studying results demonstrate that can improved bonding strength to carry out the bonding...
3D promises a new dimension in composing systems by aggregating chips. Literally. While the most common uses are still tightly connected with its early forms as a packaging technology, new application domains have been emerging. As the underlying technology continues to evolve, the unique leverages of 3D have become increasingly appealing to a larger range of applications: from embedded/mobile applications...
The following paper will give an overview about the main reliability aspects of silicon carbide power devices. After a brief review of the key device concepts it covers reliability topics of bipolar devices, Schottky diodes, metal oxide semiconductor field effect devices, and junction field effect devices. Special attention is paid to the influence of the different reliability topics on the commercialization...
This paper describes the thermo-mechanical design of an advanced zero-level capping technology used for packaging of a MEMS die. The package approach uses Intermetallic Compound (IMC) bonding to seal the MEMS die with a cap, and uses Through Silicon Via's (TSV) to provide the electrical connections from the MEMS die to the second level substrate (LTCC or PCB). Advanced FEM based thermo-mechanical...
New fields of high power inverter systems such like windmills, hybrid cars, hybrid trucks, and off road vehicles require new ways of power electronics integration and packaging. The requirements in size, weight, reliability, durability, ambient temperature, and environment are driving the operation temperatures of power electronics beyond the limits of today's industrial applications. In industrial...
Packaging of Microsystems is one of the key technologies for success or failure of a product in the market. Performance aspects, reliability performance, cost and fabrication volume capability are among the factors governed by packaging - if not properly met, even a well designed component will not meet the market requirements. This paper targets to provide an overview on viable technologies for packaging...
In present study, a backside-etched silicon chip with a polysilicon diaphragm flip-chip attached on a printed wiring board (PWB) and globally bumped on a FR4 substrate was investigated based on finite element analysis (FEA) for determining three key parameters of flip chip chip size packaging (FC-CSP), namely, the size of solder bump, the thickness of PWB substrate, with/without U8437-3 underfill...
This paper reports a demonstrator for electrical interconnection of a fluidic glass bio-chip to the macro world. Our assay used a patterned kapton 8 mum copper-plated, with 8 electrical lines placed at a 2.54 mm pitch. Filling the holes provided through the kapton foil with Ag-epoxy resin did the electrical connection between metallic lines on glass and the corresponding copper lines on the top of...
Market drivers, technology scaling and integration trends of application processor packaging are first presented. Component level and board level quality and reliability challenges are then discussed in the areas of thin die and thin core package warpage, lead free flip chip die to package interconnect mechanical integrity, and lead free package to motherboard solder joint reliability. Challenges...
This paper presents a novel interconnect technology and packaging solution for silicon power devices, along with the virtual prototyping tool created to develop the concept and optimize it in terms of reliability. The technology is based on the use of bumps (i.e., conductive spheres or cylinders) to connect the surface of vertical power components and is characterized, in comparison with standard...
Because of Moore's (scaling/integration) law, the Cu/low-k silicon chip is getting bigger, the pin-out is getting higher, and the pitch is getting finer. Thus, the conventional organic buildup substrates cannot support these kinds of silicon chips anymore. To address these needs, Si interposer with TSV has emerged as a good solution to provide high wiring density interconnection, to minimize CTE mismatch...
A new silicon transistor has been developed that enables the design of high power pulsed amplifiers through its unique device structure and reliable packaging methodology. The HVVFETtrade (High Voltage Vertical Field Effect Transistor) technology has been optimized for pulsed applications with an all gold wire scheme. The HVVFET has been characterized with over 10 billion pulses with no sign of wire...
Wafer Level Packaging (WLP) has the highest potential for future single chip packages because the WLP is intrinsically a chip size package. The package is completed directly on the wafer then singulated by dicing for the assembly. All packaging and testing operations of the dice are replaced by whole wafer fabrication and wafer level testing. Therefore, it becomes more cost-effective with decreasing...
The following topics were dealt with: integrated circuits; high-speed communication applications; advanced silicon technologies; microwave power applications; millimeter-wave applications; advanced MMIC technology optimization; frequency generation; frequency conversion; CMOS technology; GaN-based power amplifiers; MM-wave technology; physics-based microwave component modelling; mixed-signal silicon...
This paper aims to provide a fine-pitch Sn/0.7Cu lead-fee solder bumps fabrication process that is characterized by using a novel plating-friendly polishing mechanism to transform the plated-based Sn/0.7Cu lead-free solder bumps with huge height deviation into smooth and uniform ones. The final experimental results showed that the UIW (uniformity in wafer) of Sn/0.7Cu solder bumps at 50 mum pitch...
In portable electronics products, where area is at a premium, there has been a move to three dimensional solutions, achieved by either package stacking or die stacking. Package stacking allows the parts to be tested before stacking to maintain high compound yields, but is volume and cost inefficient because each die has its own enclosure. Die stacking using wire bond interconnects is low cost, but...
Process scaling is well know to increase overall chip-level soft error rates (SER) if no additional mitigation techniques are applied [Seifert04]. The purpose of this study is to summarize recent investigations conducted by the author to characterize the SER benefits and limitations of one particular SER mitigation technique: radiation hardened sequentials that utilize local redundancy. The studied...
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
The problem of a corner delamination in a fan-out chip scale package subjected to thermomechanical load is investigated. The fracture mechanics parameters, including the stress intensity factors, the strain energy release rate, and phase angles, for a quarter-circular corner delamination between silicon die and fan-out redistribution polyimide layer are obtained by using numerical finite element approach...
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