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This paper presents thermal characteristics of rotor-side converter (RSC) in doubly-fed induction generator (DFIG) wind turbines (WTs). A numerical power loss and thermal model simulator has been developed to obtain instantaneous junction temperature of power devices for a wide operating range of RSCs. Thermal performance of four RSC candidates, including Si IGBT based 2L / 3L-NPC / 3L-ANPC RSCs and...
One of the best methods to reach geographically remote and unbanked population is through mobile services. With the prevalent use of mobile phones, most parts of the ASEAN countries can be reached and this is a promising setting for mobile payment growth. One such country is the Philippines. This study conducted a quantitative research via online survey among the unbanked Filipinos to determine the...
In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to...
We propose a novel vertical metal oxide semiconductor device with high permittivity (HK) trenches interleaved inside of the drift region (HKMOS). The novel structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing the potential modulation effect of HK trenches, which also introduce accumulation effect to significantly reduces the specific on-resistance...
This paper investigates multi-user scheduling in a full-duplex (FD) wireless-powered communication network, consisting of multiple energy harvesting (EH) source nodes (SNs) and one FD hybrid access point (HAP). All SNs have no embedded energy supply and thus need to perform EH before transmitting their data to the HAP. Thanks to the FD capability, the HAP simultaneously receives data from the scheduled...
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive...
In past years the global demand for energy has been increasing steeply, as well as the awareness that new sources of clean energy are essential. Photo-electrochemical devices (PEC) for water splitting applications have stirred great interest, and different approach has been explored to improve the efficiency of these devices and to avoid optical losses at the interfaces with water. These include engineering...
The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges...
For resistive random access memory (RRAM) applications, selector devices play an important role to ensure that an individual memory element can be properly addressed through reading and writing while at the same time the information stored in the other cells of the same array does not get perturbed and power does not get wasted by undesirable leakage through unselected cells. An ideal selector device...
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68...
We have proposed a distributed storage system which dynamically makes storage tiers and optimizes location of data blocks autonomously. This aims to enhance the I/O performance of the storage system without remarkable network overhead. Our system dynamically organizes storage tiers considering device characteristics. And the data blocks will be placed in a suitable storage tier according to their...
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are...
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are...
In this paper, we will review the current challenges and advancements to continue standard device scaling beyond the 5nm technology node. Apart from the introduction of new materials and device concepts, we will also address the trend towards more heterogeneous systems requiring close interaction between the technology and system optimization.
Due to the limitations in the operating conditions of the conventional silicon (Si) power device based dc-dc buck converters as well as its notable power losses, there is an increased interest and need to exploit the promising features of wide bandgap power devices toward more efficient converters. This paper presents the design of an efficient, high performance and reliable non-isolated dc-dc buck...
STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has attracted considerable attention of late since it is the most promising logic compatible nonvolatile memory that is suitable for advanced logic nodes (N28 and beyond) in terms of endurance, speed and power. Embedded STT-MRAM has thus been proposed as a candidate for emerging low standby-power connectivity systems such IoT (Internet-of-Things)...
This paper focuses on performance benchmarking of Gallium Nitride based transistors operating in a soft-switching DC-DC converter. Two prototype converters rated for 300 W were assembled to compare the performance of Si MOSFETs and GaN HEMTs: 100 V devices were used in the current-fed input side and 650 V ones in the output voltage-fed side. The experimental results confirm superior switching performance,...
Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional...
The impact of gate voltage differences on the performance of the novel n-type silicon homojunction SOI-Tunnel FET is studied. Based on numerical simulation results using Synopsys Technology Computer-Aided Design (TCAD), the higher on-current and the ultra-low off-current are observed as compared to that of a conventional SOI-Tunnel FET. The analysis of energy band corroborates that gate voltage differences...
The purpose of this study was to provide a low cost manufacturing solution for Silicon Trench based Schottky rectifiers utilizing NiPt alloy composition that produces multiple barrier heights and provide designers the option to easily adjust the barrier height (BH) for rectifier designs. Higher temperatures needed to obtain larger barrier heights are generally unfavorable for trench-based Schottky...
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