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Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those techniques require final solar cells. We present a new characterization technique for screening PID-susceptible cells during the cell fabrication process. Illuminated Lock-In Thermography (ILIT) was used to image PID shunting of the cell without metallization...
The applicability of molybdenum, tungsten and vanadium oxide as a hole contact for silicon wafer based solar cells is explored. The Si heterojunctions for which these materials are in direct contact with the c-Si absorber, featuring an additional a-Si:H passivation layer or where these materials are used as an additional contact layer in-between the TCO / a-Si:H(p) Schottky contact are addressed....
Dilute nitride GaNP is potentially useful as the top junction in dual-junction solar cells on Si because it has a tunable direct-bandgap and small lattice mismatch with Si. Investigations on GaP are the first step toward this goal. Our best GaNP solar cell on GaP ([N] = 1.8%, Eg = 2.05 eV) achieves an efficiency of 7.9%, which is 3 times higher than the most efficient GaP solar cell to date and higher...
Overtemperature occurring in silicon solar panels subject to partial shadowing are reduced by means of a new bypass circuit. The circuit exploits a series connected power MOSFET which sustains part of the reverse voltage developing across the shaded solar cell. Neither power supply nor control logic are required, resulting in an appealing advantage with respect the other active bypass circuits. Experiments...
Photovoltaic properties of perovskite-type solar cells with polysilane-doped hole transport layers were investigated. Poly(methyl phenylsilane), dimethyl-polysilane and decaphenylcyclopentasilane were doped into 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) solutions. Conversion efficiencies of the TiO2/CH3NH3PbI3/polysilane-doped spiro-OMeTAD photovoltaic cells...
The AgGaTe2 layer growth was performed using the mixed source of Ag2Te and Ga2Te3 by the closed space sublimation method. It was expected from the phase diagram of Ag2Te-Ga2Te3 system that the AgGaTe2 could be achieved with approximately 1∶1 mixing ratio, and the chalcopyrite phase would be formed at temperature around or lower than 730°C. Si substrates were used and the Ag2Te buffer layer was introduced...
Layered CdTe nanoparticles were deposited on surfaces of n-on-p crystalline Si solar cells. Their short-circuit current and conversion efficiency were enhanced due to the nanoparticle deposition. Measurements of reflectance and external-quantum-efficiency spectra as well as atomic-force-microscope observations implied that the enhancements in cell performances were attributable to textured structures...
Absorption enhancement in thin film silicon solar cell is the most challenging issue. Plasmonic light trapping technique based on metal nanoparticle is an efficacious solution in this respect. We have designed an enhance absorbed front surface of a thin film Si solar cell placing silver (Ag) nanoparticle on the top of the surface. Light transmittance and photon absorption enhancement are measured...
The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two different annealing routines were studied. The first one using a single annealing to activate both B implanted emitter and P implanted BSF, while the...
High reflection losses and low photon absorption combined with high velocity large area surface recombination are the main obstacles for boosting the efficiency of solar cell. We report a simple large-scale one step catalytic room temperature fabrication approach of black silicon (B-Si) in an aqueous solution of HF and AgNO3. B-Si based on porous and nonporous Silicon nanowires (SiNWs) shows a superior...
This paper presents an analysis of the degradation of n-type Bifacial Solar Cells submitted to potential induced degradation (PID) stress. PID is one of the main causes of performance degradation during the operating life of a solar cell and the study of the degradation kinetics is fundamental to prevent the excessive deterioration of the conversion efficiency. We report the results obtained on cells...
The interconnection of silicon solar cells is commonly realized by soldering copper ribbons or wires with a solder coating onto screen-printed silver contacts. Due to the difference of the coefficient of thermal expansion (CTE) of copper and silicon, thermomechanical stress is induced after the soldering process during cooling down to room temperature. In the first part of this work, a model is introduced...
In this work, we mainly present our current development progress of high efficiency rear-emitter heterojunction solar cells using n-type silicon wafers, in three areas: a) silicon wafer surface texture treatment, b) a-Si:H(i) layer optimization for obtaining superior wafer surface passivation, and c) various TCO layer characterizations for improving the Jsc of the solar cells. We attained 20.78%,...
Power generation from solar photovoltaics has been increasing since the last decades. Currently, ground-mounted solar-PV, solar rooftop-PV, Building integrated-PV, and Roof-Jack mounting system are the available methods in photovoltaics for deployment of solar energy. The performance of a solar PV system has depended mainly on conversion efficiency which depends on the material used for construction,...
The major factors affecting the lifetime of N type monocrystalline silicon have been introduced in this article. It has shown that the lifetime of original wafer and the conversion efficiency of solar cell are closely related to the concentration of oxygen, carbon, and metallic impurities, even to thermal history etc. The conversion efficiency of the solar cell is also linked closely with the lifetime...
The photon upconversion materials shift the photon energy to an upper level in order to be absorbed by the photovoltaic material and thus increase the solar cell efficiency by increasing the number of absorbed photons. This paper modeled the efficiency of the upconversion process against different values for the energy gaps of the upconversion material in order to find the optimum energy gap distribution...
It is shown that a record power conversion efficiency (PCE) of 1.25% can be obtained through coating reduced graphene oxide/n-silicon (rGO/Si) solar cell with silver nanowires (Ag NWs) and subsequently GO. rGO/Si solar cells were obtained through one step spin coating of GO on patterned n-silicon wafer followed by thermal annealing in an inert environment. Ag NWs were employed to reduce the sheet...
We are always in the search alternative sources of energy, mostly from renewable resources. In previous time generally we know only solar and wind power, when in the day time the sun is always available, it can be hidden for some hours in a rainy day. Nowadays, a new trend of technology in the field of solar cell that can generate electricity in both sunny and rainy days. This cell will use a wonder...
The Solar Energy and New Energies Research Institute (IRESEN), founded in February 2011, is a Moroccan institute for applied solar energy and new energy research which is positioned at the applied research and technology to strengthen the link between industry and universities, engineering schools and research centers. The institute set-up an international test and research platform for renewable...
A simple method for metal deposition on solar cells surface has been developed. Nickel is used as contact barrier to copper and permits low contact resistance on n+ silicon Nickel chloride is used to deposit contacts on front surface. The pattern is obtained by laser ablation on silicon nitride. Laser treatment permits also to get a selective emitter n++ of 30Ω/ □ sheet resistance on which Nickel...
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