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Semiconductor nanowires can be grown with a high degree of perfection and they start to find their use into various kinds of device applications. Research on the growth of nanowires has led to many unique opportunities, such as a high degree of freedom in combining different semiconductors into 3D heterostructures [1]. Interesting nanowire-specific challenges are also dealt with, such as the ambiguity...
We demonstrate the design and fabrication of a novel micromachined Thermoelectric Nanowire Characterization Platform (TNCP) which is utilized to characterize the thermoelectric properties of various nanowires. Single nanowire is assembled onto the pre-fabricated TNCP by means of dielectrophoresis (DEP) in combination with a water droplet evaporation scheme. After assembly, a reliable ohmic contact...
This paper presents an innovative technique of integrating silica nanowires to photoresist-derived carbon microelectromechanical systems (C-MEMS) on silicon substrate. The silica nanowires were synthesized through thermal treatment in a tube furnace at 1200 °C under a gaseous environment of N2 and H2. The stiff morphology and radicalized distribution around carbon posts of nanowires was observed,...
We have simulated the piezoresistance coefficients (Pie coefficients) in Si/Ge core-shell nanowires with a certain diameter and different thickness Ge-shell in the longitudinal direction on the basis of First-Principles calculations of models. Through calculations, it was found that the Pie coefficients of the nanowire constructed with an axis of Si atoms and three layers of Ge atoms outside (Si1Ge...
A novel method to fabricate the top electrode of ZnO nanogenerator is introduced in the article. Hydrothermal synthesis is adopted to grow ZnO nanowires array structure. And the sputtering process is employed as a simple fabrication method to form the top electrode. Scanning electron microscope (SEM) analysis has been carried out to identify different layers in nanogenerator. The energy harvesting...
Nanowires have attracted considerable interest as the nanoscale interconnects and as the moving elements of both electronic and electromechanical devices. The evaluation of nanomechanical property plays a significant role in the development of new nanowire-based devices. Recently, we are engaged in developing an easy method for nanomechanical measurement by using an in-plane-mode piezoresistive vibration...
Vertically-stacked Silicon NanoWire FETs (SiN-WFETs) with gate-all-around control are the natural and most advanced extension of FinFETs. At advanced technology nodes, due to Schottky contacts at channel interfaces, devices show an ambipolar behavior, i.e., the device exhibits n- and p-type characteristics simultaneously. This property, when controlled by an independent Double-Gate (DG) structure,...
In this paper, we report a simple solution method to synthesize well-aligned ZnO nanowires (NWs) arrays on silicon substrate with ZnO seed layer. We can control the morphology of ZnO NWs arrays by adjusting growth parameters, such as the thickness of the seed layer, the concentration of the solution, the growth temperature, the growth time and the pretreatment, etc. The size of ZnO NWs will change...
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and drastically reduced to zero variability at the sub 10 nm nodes level. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, mixing logic and memories, Heterogeneous...
In this work, we present the technological constrains and limitations in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier lowering is investigated with respect to key technological parameters. This work could serve as a guideline for technology...
We present in this paper a microsystem coupling electrowetting on digital microfluidic and nanostructured surfaces for matrix-free Laser Desorption/Ionization Mass Spectrometry (LDI-MS) analysis of small biomolecules. Silicon nanowires are processed to form highly sensitive pads for LDI analysis and also to produce superhydrophobic surfaces for enhanced transfer of droplets containing the analytes...
A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon...
A novel lifting-off method of ZnO nanowires from Si substrate and embedded in flexible films have been proposed in this study. Compared with peeling-off method by polydimethyl- siloxane (PDMS), the embedded ZnO nanowires may suffer from external forces to change the dimension. The shape of ZnO nanowires remained almost unchanged after using the novel lifting-off process. Flexible films served as the...
We demonstrate the fabrication and improvements of our next generation Thermoelectric Nanowire Characterization Platform (TNCP) that is utilized to investigate the thermoelectric properties of individual nanowires to obtain the Seebeck coefficient S, electrical conductivity σ and thermal conductivity κ from the same test specimen. Only from these data, the so-called figure of merit ZT can be obtained...
We present terahertz carrier dynamics in individual silicon nanowires by ultrafast optical-pump and terahertz-probe spectroscopy. Density-dependent study reveals that the surface traps play a major role in the carrier dynamics, in which the conductivity changes with the terahertz polarization parallel to nanowire axis are extracted.
We demonstrate the use of vertical silicon nanowires for multispectral imaging. The eight filter functions of our filter array are defined in a single lithography step. We show both visible color and near-infrared imaging.
Released electrostatic screening effect and Joule heating in bundle arrays of carbon-nanotube-on-silicon-nanowire heterojunctions realized with novel fabrication approach enables efficient field emission of 0.9 V/μm turn-on field and >5 mA/cm current density.
We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.
We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology...
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