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NF3/NH3 remote plasmas are used in oxide etch back process prior to the salicide process of word lines (WL) owing to high etch selectivity of silicon oxide over polysilicon. The etch saturation behavior which performs etch stop with a certain period of process time is one of the interesting characteristics during oxide etch process by employing NF3/NH3 remote plasmas. In this study, it is found that...
In this study, the fabrication of thin porous anodic aluminum oxide (AAO) templates with controllable thickness of 400–1300 nm is demonstrated. One-step anodizing method is used to generate AAO template with hexagonal porous distributed profile. The pore diameter pore-widening and AAO barrier layer thinned down are investigated. The morphologies and pore structures of the fabricated AAO templates...
In this paper, a gold nano-dot (Au-ND) is successfully prepared on a silicon tip apex for scanning Kelvin probe microscopy (SKPM) applications. An extra facile localized fluoride assisted Galvanic replacement reaction (LFAGRR) is proposed to replace the silicon (Si) atoms at the tip apex with Au ones. We successfully fabricated Au-ND coated tip apex by tapping the Si tip apex against a thin layer...
In this study, the quality of grain boundaries was evaluated by measuring their strength. In order to evaluate the strength of grain boundaries quantitatively, a micro-tensile test method that can measure the strength of a grain boundary has been developed. A focused ion beam was used for making a fine columnar sample which consisted of two grains in series. The sample was jointed to a small both...
This paper reports a new lithography method using thin-film edge electrodes (TEEs) to collectively transfer nanopatterns by generating oxide on the substrate surface via an electrochemical reaction (ECR). Nanometric thick TEEs are formed on the sidewall of insulating stamping structures. ECR-based oxide patterns have the same width and shape as the TEEs because ECR is induced only between the conductor...
A micro fluidic chamber with 178 nm-thick single crystal Si windows on a micro channel has been developed. Because of these thin windows, the aquatic sample inside of the channel can be observed by scanning electron microscopy. Secondary electrons from a sample in the channel are able to be detected in vacuum with an acceleration voltage of 15 kV, where the emission current is 75 µA. The micro fluidic...
Deep vertical etching of Si using hydrogen peroxide as oxidant and Au as catalyst has been studied in terms of relative reactant concentrations and catalyst morphology. The concentrations of hydrogen peroxide and hydrofluoric acid are highly important and the ratio of the same can be varied to achieve isotropic to highly anisotropic vertical etching. Catalyst morphology and positioning of the substrate...
SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher...
The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct...
In this present work, it was reported the functionalization of porous silicon surface in order to immobilize HRP. Multistep strategy was used allowing maintaining the enzymatic activity. First, acid terminations were generated on hydrogenated PSi surface by thermal hydrosilylation reaction of undecylenic acid with silicon hydrides. Then, the carboxyl-terminated monolayer was transformed to active...
In this work we present our recent investigation on characterizing mechanical properties of porous silicon (PS) by using instrumented micro-indentation. Hardness and elastic modulus for oxidized and nonoxidized PS were measured. Experimental results revealed that hardness and elastic modulus are significantly lower than that of silicon substrate and decrease with increasing porosities. After oxidation...
Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
The synthesis of single-crystal silicon (Si) nanowires by a metal-catalyst-free vapor-liquid-solid (VLS) process was studied. Silicon nanowires have been successfully synthesized by simple thermal treatment without any metal catalyst. For cases without metal catalysts, Si nanowires are grown by VLS processes assisted by sulfur. It is thought that single-crystal Si nanowires are grown by a VLS process...
A high Q factor photonic crystal ring resonator is designed and experimentally demonstrated on a silicon-on-insulator wafer. We also demonstrate efficient light enhancement from Ge quantum dots embedded in the photonic crystal ring resonator.
High conformity sidewall ZnO nanorods are manufactured on etched Si by hydrothermal method. The temperature is fixed at 90 degree Celsius. The morphology of ZnO nanorods is examined by scanning electron microscopy. Also, the results show that we successfully spin coat ZnO seed layer on the sidewalls of grooves. Moreover, ZnO nanorods are grown in grooves of etched Si substrate.
In this article a concept of the fully, on-a-chip, integrated MEMS electron microscope and high vacuum MEMS micropump is discussed. The device is formed as a multilayer sandwich of anodically bonded glass/silicon part. The “active” part contains field emitting CNT electron source with proper configuration of electrodes forming an electron beam. Electron beam hits a thin membrane, passes through sample,...
Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect...
This paper presents MOSFET implant failure analysis using plane view scanning capacitance microscopy (PVSCM) at silicon substrate level. Failing transistors are characterized by nano-probing (NP) at contact level. The cause of failure was deduced from the combination of PVSCM, IV characteristics from NP measurement, and TEM cross-section analysis. Technology computer aided design (TCAD) simulation...
Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 −1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 −1...
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