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This paper presents a new method for testing materials at the microscale at high temperature under bending in-situ in SEM. The proposed method consists of a straining stage with built-in force and displacement sensors attached to a heating stage inside the SEM. The sample is co-fabricated with the stage to eliminate any misalignment error. The method is applied to test the strength of single crystal...
Crack and dislocation of direct wafer bonded silicon diaphragm on silicon dioxide layer of silicon substrate containing cavity were analyzed. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and focused ion beam (FIB) were conducted on cracked silicon diaphragm to understand the mechanisms of crack initiation and propagation. SEM analysis results show that the crack initiated...
Low-density Polyethylene (LDPE) was modified by using simultaneously 2 additives. Each additive had a specific attribute. Silicon was used. Using TEM with EELS, it was proved first that the passivated version constituted a double core consisting of Si surrounded by a nanometric layer of amorphous Silica (SiO2). Thus Si brought the possibility of an enlarged dielectric storage capacity with a barrier...
A simple and effective method to grow GaN on Si substrates has been achieved. The method that GaN comes out from a submicron and deep hole with nearly zero dislocations above the mask is demonstrated. This work proves that reducing the epitaxy area by using mask and increasing the depth to width ratio of pattern contribute to filtering the dislocations and improving the quality of GaN.
We present an effective technique to characterize silicon waveguide geometry by using Mach-Zehnder interferometers. The technique can independently estimate SOI thickness and waveguide width from the analysis of two simple interferometers. The results agree with standard metrology using ellipsometry and SEM microscopy, and allows the characterization of proximity effects too.
Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).
Graphene is a wonderful material with outstanding properties which is ideal for micro-electro-mechanical systems (MEMS) and also nano-electro-mechanical systems (NEMS) like sensors and switches including strain gauges, mass and force sensors. Graphene is single atom thick layer of graphite which consists of carbon atoms that are bonded together in a hexagonal honeycomb lattice. A way of fabricating...
In order to obtain a large area MoS2 thin film, a thin Mo film were deposited on Si substrates using E-gun. The samples were placed on a quartz tube within a horizontal furnace to produce MoS2 in a rich sulfur and argon environment from 700 to 1000°C. Both Scanning electron microscope (SEM) and X-ray diffraction (XRD) results reveal that MoS2 films grown at the higher temperature possess better crystallization...
In-situ dry cleans of silicon-based surfaces preceding the metallization process step have a crucial impact on contact resistance, yield and reliability of middle-of-the-line (MOL) local interconnects. Existing precleaning techniques meet numerous challenges predominantly originated from reduced device geometries such as critical dimensions enlargements, epitaxial junctions gouging and insufficient...
Silver (Ag) solid solution with indium (In) is further studied since Ag-In binary system has been demonstrated with an extraordinary anti-tarnish property and superior mechanical properties, such as malleability, strength, and ductility. How to fabricate that kind of bonding materials at relative low temperatures is a challenge. In this paper, the unique Ag-In solid solution joints are produced successfully...
Room temperature bonding of Polymethylglutarimide was performed for a damage-free layer transfer method. The PMGI layer was bonded to support Si wafer by using the Surface activated bonding method using nano-adhesion layers. Using SAB, bonded area covering around 90% of the wafer surface, with a room temperature bond strength of ∼1 J/m2 is achieved. Micro voids at bond interface are never observed...
We have recently demonstrated electrically pumped 530nm (green) and 615nm (red) InGaN/GaN disk-in-nanowire (DNW) [1, 2] monolithic edge-emitting lasers on (001) silicon substrates. The nanowire heterostructures were grown by molecular beam epitaxy (MBE). These are the only lasers directly grown on (001) silicon without any substrate tilt or intermediate buffers. The lasers have demonstrated excellent...
Pollution layer on insulator surface may change under corona discharge during the long-term service of insulators, which would influence the performance of contaminated insulators. In this paper, AC corona discharge experiments are studied by utilizing a 31-needle-to-plate electrode system. The Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron...
Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) ∼70 mV/decade and high ION/IOFF (>108) ratio.
Dielectric laser accelerators are a compact and scalable alternative to radio frequency accelerators. We present the first demonstration of over 200 MeV/m acceleration and deflection gradients with a silicon structure at 96.3keV electron energy.
We describe the transfer of chemical vapor deposition grown graphene onto silicon-on-sapphire waveguides to form heterostructure waveguide photodetectors which had responsivities of 0.9 mA/W and 4.5 mA/W at 1.55 μm and 2.75 μm wavelengths, respectively.
We demonstrate the formation of an amorphous chalcogenide photonic crystal light emitter by using a microtrench filling method and solution processing.
The combination of nano/micro technology, biology and metal oxides materials have seen great advances in the development of transducers and biochips for biological and medical fields. In this work, TiO2 nanoparticles thin films were prepared using sol-gel method and annealed at 400°C to promote nanoparticles crystallization in anatase phase. The influence of surface topologies and uniformity distribution...
In this work, we discussed the fault isolation method for Thin-Film Transistor (TFT). Many defects in TFT can be directly observed by optical microscope; however, for some defects, they are not visible in either optical microscope or SEM, which makes the fault isolation very challenging. We demonstrated that OBIRCH can be used to find the defect location in the leakage/short type TFT failure. The...
PV cells efficiency increase by employing FZ silicon was shown in a series of works. At PVSC40 we reported our results in development of cheap FZ feedstock production using electron beam heating. However, we have encountered difficulties with obtaining dislocation free FZ single crystals from our rods and rods diameter had substantial fluctuations. Source of generation of previously absent dislocations...
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