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Demand of short failure analysis has been increasing in semiconductor failure analysis. It is known from the previous studies that many short failure analysis methods are suggested. However, it is extremely difficult to identify the short failure location in recent advanced devices due to the fact of optical resolution limit. On the other hand EBAC has been noted as the high resolution method to identify...
Reliability of Superjunction (SJ) MOSFET is closely related to its manufacturing process. Experiments are carried out to investigate the electrical characteristics in high temperature of SJ MOSFET produced by deep trench filling technology. Filling holes are confirmed to be responsible for the performance deterioration in high temperature and the mechanism has been analyzed thoroughly.
In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
We report field emission properties of gated p-type silicon field emitter arrays with submicron gate aperture induced by laser pulses. Polarization dependent photoemission is observed and the current shows linear dependence on laser power. The results indicate that the current pulses from our devices are created by photo-field emission process dominantly.
This is a case study of an early failure analysis on a chip fabricated on the 40nm technology node. A large leakage current was observed in the high voltage (HV) supply after the chip was stressed as a part of an early failure rate (EFR) test. Electrical failure analysis (EFA) using Backside Emission spectroscopy [1] and Optical Beam Induced Resistance Change (OBIRcH) [2] showed the existence of hotspots,...
The GOX is the most fragile element of a MOS transistor. With the scaling of device, the GOX thickness has been reduced to a few atomic layers, therefore any tiny defects in gate oxide can lead to high leakage current and even gate oxide breakdown. FIB/TEM analysis and chemical wet etching pinhole technology are usually adopted to characterize GOX leakage defect. However, TEM by FIB-cross section...
We report the featured field electron emitter of Si tip with individually integrated nano-channel. A rational procedure was developed to fabricate the uniform integrated device. The Si nano-channel can limit both current and heat flow. The heat resistance of the nano-channel resulted in the heat accumulation at the tip apex, inducing the thermally assisted field electron emission. The negative feedback...
The multi-stated weighted k-out-of-n (majority) systems are widely applied in various scenarios such as industrial or military applications where the ability of fault-tolerance is desirable. In this paper, a stochastic multiple-valued approach (SMVA) is proposed in order to evaluate the system efficiently. The weights and reliabilities of multi-state components are represented by stochastic sequences...
A phased-mission system (PMS) is usually consisting of a number of non-overlapping phases, and the phases should be completed sequentially to achieve a successful mission. In practice, imperfect fault coverage (IPC) plays an important effect on the system reliability. In this paper, stochastic multi-value (SMV) models are proposed to predict the system reliability of a multi-stated PMS consisting...
We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller...
We have investigated the physical mechanisms of explosive breakdown of a graphene/SiO2/Si (GOS) structure under high-field pulsed drive: both p-Si and n-Si GOS structures under inversion bias. The breakdown damages are found to significantly differ between the two structures: highly localized, circular, protruding/deep melt explosion of Si for the n-Si GOS case; shallow, irregular, laterally-propagating...
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular...
Both Carbon Nanotube and Silicon Nanowire are emerging as promising materials for the development of next generation electronic devices. Our focus is mainly on the comparative study of Silicon Nanowire Field Effect Transistor (SiNW-FET) and Carbon Nanotube Field Effect Transistor (CNT-FET). In this work, we have simulated an n-type single walled CNT-FET and a SiNW-FET. A brief comparison between the...
Graphene is an appealing material due to its distinct electronic, mechanical and optical properties. Recently, graphene based field effect transistor (GFET) have been rapidly developed and show the potential applications.
In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to...
We propose a novel vertical metal oxide semiconductor device with high permittivity (HK) trenches interleaved inside of the drift region (HKMOS). The novel structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing the potential modulation effect of HK trenches, which also introduce accumulation effect to significantly reduces the specific on-resistance...
With silicon-based transistors approaching their scaling limits, multiple successor technologies are competing for silicon's place. Due to recent fabrication breakthroughs, one promising alternative is the carbon nanotube field-effect transistor (CNTFET), which uses carbon nanotubes as the channel medium instead of silicon. Although logic gates using CNTFETs have been demonstrated to provide up to...
Four-wave mixing has been proposed as means for low-noise, low-power all-optical control of light on chip. In our recent work, we have experimentally demonstrated a transistor-like all-optical logic gate in a silicon waveguide. This gate is optimal when operated in the SWIR and mid-IR regimes.
Graphene barristor, in which a Schottky barrier formed between graphene layer and silicon layer can widen the bandgap with the control of gate voltage, is a promising method to enhance on/off current ratio in digital circuit design. In this work, a theoretical study is presented based on analog behavior modeling in SPICE. We have developed a compact device model to evaluate the performance of graphene...
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive...
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